FDP8030L_Q Fairchild Semiconductor, FDP8030L_Q Datasheet

FDP8030L_Q

Manufacturer Part Number

FDP8030L_Q

Description

MOSFET N-Ch PowerTrench Logic Level

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDP8030L_Q.pdf (5 pages)

Specifications of FDP8030L_Q

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

80 A

Resistance Drain-source Rds (on)

0.0035 Ohms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220AB

Fall Time

200 ns

Forward Transconductance Gfs (max / Min)

170 S

Minimum Operating Temperature

- 65 C

Power Dissipation

187 W

Rise Time

185 ns

Typical Turn-off Delay Time

160 ns

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FDP8030L/FDB8030L

N-Channel Logic Level PowerTrench

General Description

This N-Channel Logic level MOSFET has been

designed specifically to improve the overall efficiency of

DC/DC

conventional switching PWM controllers.

These MOSFETS feature faster switching and lower

gate charge than other MOSFETS with comparable

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

1999 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

DS(on)

DSS

GSS

, T

STG

specifications.

converters

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Power Dissipation @# T

Operating and Storage Junction Temperature Range

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

using

either

– Continuous

– Pulsed

TO-220

FDP Series

Parameter

synchronous

= 25 C

Derate above 25 C

=25

C unless otherwise noted

(Note 1)

MOSFET

Features

TO-263AB

FDB Series

80 A, 30 V.

Critical DC electrical parameters specified at

Rugged internal source-drain diode can eliminate the

High performance trench technology for extremely

175 C maximum junction temperature rating

elevated temperature

need for an external Zener diode transient

suppressor

low R

DS(ON)

-65 to +175

Ratings

1.25

62.5

300

187

275

0.8

= 0.0035

= 0.0045

November 1999

@ V

FDP8030L Rev C(W)

= 10 V

= 4.5 V

Units

W C

C/W

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FDP8030L_Q Summary of contents

Page 1

... L 1/8” from case for 5 seconds Thermal Characteristics Thermal Resistance, Junction-to-Case R JC Thermal Resistance, Junction-to-Ambient R JA 1999 Fairchild Semiconductor Corporation MOSFET Features synchronous or Critical DC electrical parameters specified at elevated temperature Rugged internal source-drain diode can eliminate the need for an external Zener diode transient ...

Page 2

Electrical Characteristics Symbol Parameter Drain-Source Avalanche Ratings W Single Pulse Drain-Source DSS Avalanche Energy I Maximum Drain-Source Avalanche AR Current Off Characteristics BV Drain–Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain ...

Page 3

Typical Characteristics 100 3.0V 4. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 80A 10V GS 1.4 1.2 1 ...

Page 4

Typical Characteristics 80A 120 160 Q , GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 600 300 100 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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