VS-16RIA100 Vishay Semiconductors, VS-16RIA100 Datasheet - Page 6

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VS-16RIA100

Manufacturer Part Number
VS-16RIA100
Description
SCRs 1000 Volt 16 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-16RIA100

Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
360 A
Rated Repetitive Off-state Voltage Vdrm
1000 V
Off-state Leakage Current @ Vdrm Idrm
10 mA
Forward Voltage Drop
1.75 V
Gate Trigger Voltage (vgt)
2 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
60 mA
Holding Current (ih Max)
130 mA
Mounting Style
Stud
Package / Case
TO-48
Factory Pack Quantity
100
16RIA Series
Vishay Semiconductors
www.vishay.com
6
0.01
100
0.1
0.1
10
10
0.001
0.001
1
1
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
VGD
Steady State Value
R
(DC Operation)
rated di/dt : 10V, 20ohms
tr <=0.5 µs, tp >= 6 µs
<=30% rated di/dt : 10V, 65ohms
tr<=1 µs, tp >= 6 µs
thJC
IGD
= 1.15 K/W
For technical questions, contact: ind-modules@vishay.com
0.01
Fig. 8 - Thermal Impedance Z
1000
100
Fig. 7 - Forward Voltage Drop Characteristics
10
0.01
1
0.5
Medium Power Thyristors
16RIA Series
Instantaneous On-state Voltage (V)
(Stud Version), 16 A
Fig. 9 - Gate Characteristics
Instantaneous Gate Current (A)
Square Wave Pulse Duration (s)
1
(b)
0.1
1.5
(a)
16RIA Series Frequency Limited by PG(AV)
0.1
T = 25°C
T = 125°C
2
J
J
2.5
thJC
16RIA Series
1
Characteristics
3
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
3.5
1
10
(1)
(2)
(3)
(4)
100
10
Document Number: 93695
Revision: 19-Sep-08

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