VS-22RIA60 Vishay Semiconductors, VS-22RIA60 Datasheet - Page 4

• Manufacturer Part Number: VS-22RIA60
• Description: SCRs 600 Volt 22 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-22RIA60

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 420 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 10 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 130 mA
• Mounting Style: Stud
• Package / Case: TO-48
• Factory Pack Quantity: 100

22RIA Series
Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance R
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4
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque
Approximate weight
Case style
R
CONDUCTION ANGLE
thJC
CONDUCTION
130
120
110
100
180°
120°
90
80
90°
60°
30°
0
Fig. 1 - Current Ratings Characteristics
Average On-state Current (A)
5
30°
22RIA Series
R
thJC
10
60°
SINUSOIDAL CONDUCTION
(DC) = 0.86 K/W
90°
Conduction Angle
15
SYMBOL
T
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120°
R
R
J
, T
thCS
thJC
0.21
0.25
0.31
0.45
0.76
Stg
20
180°
Medium Power Thyristors
DC operation
Mounting surface, smooth, flat and greased
Lubricated threads
(Non-lubricated threads)
See dimensions - link at the end of datasheet
25
(Stud Version), 22 A
thJC
TEST CONDITIONS
RECTANGULAR CONDUCTION
when devices operate at different conduction angles than DC
0.15
0.25
0.34
0.47
0.76
130
120
110
100
90
80
0
Fig. 2 - Current Ratings Characteristics
Average On-state Current (A)
30°
10
60°
0.23 (0.32)
22RIA Series
R
20 (27.5)
TO NUT
2.3 (3.1)
thJC
TEST CONDITIONS
90°
T
J
= T
- 65 to 125
(DC) = 0.86 K/W
VALUES
120°
20
TO-208AA (TO-48)
0.86
0.35
0.49
J
14
maximum
180°
Conduction Period
TO DEVICE
Document Number: 93700
0.29
2.8
25
30
Revision: 19-Sep-08
DC
40
UNITS
kgf · m
UNITS
lbf in
N · m
K/W
K/W
oz.
°C
g