NVF6P02T3G ON Semiconductor, NVF6P02T3G Datasheet

NVF6P02T3G

Manufacturer Part Number

NVF6P02T3G

Description

MOSFET POWER MOSFET

Manufacturer

ON Semiconductor

Datasheet

1.NVF6P02T3G.pdf (6 pages)

Specifications of NVF6P02T3G

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 25 V

Continuous Drain Current

- 10 A

Resistance Drain-source Rds (on)

44 mOhms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-223

Fall Time

60 ns

Gate Charge Qg

1.7 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

8.3 W

Rise Time

30 ns

Typical Turn-off Delay Time

60 ns

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NTF6P02T3G, NVF6P02T3G

Power MOSFET

-10 Amps, -20 Volts

P−Channel SOT−223

Features

•

Typical Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Steady State.

2. When surface mounted to an FR4 board using 1” pad size,

3. When surface mounted to an FR4 board using minimum recommended pad

July, 2012 − Rev. 5

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current (Note 1)

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Thermal Resistance

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

i.e.: Cellular and Cordless Telephones and PCMCIA Cards

Low R

Logic Level Gate Drive

Diode Exhibits High Speed, Soft Recovery

Avalanche Energy Specified

AEC Q101 Qualified and PPAP Capable − NVF6P02T3G

NVF Prefix for Automotive and Other Applications Requiring

These Devices are Pb−Free and are RoHS Compliant

Power Management in Portables and Battery−Powered Products,

(Cu. Area 1.127 sq in), Steady State.

size, (Cu. Area 0.412 sq in), Steady State.

− Continuous @ T

− Single Pulse (t

Energy − Starting T

− Junction to Lead (Note 1)

− Junction to Ambient (Note 2)

− Junction to Ambient (Note 3)

L(pk)

= −10 A, L = 3.0 mH, R

= −20 Vdc, V

DS(on)

Rating

= 10 ms)

= 25°C

= 70°C

= 25°C

= −5.0 Vdc,

= 25°C unless otherwise noted)

= 25°C

= 25W)

Symbol

, T

DSS

qJA

qJL

stg

−55 to

Value

+150

±8.0

−8.4

71.4

−20

−10

−35

150

160

260

8.3

°C/W

Unit

Vdc

Adc

Apk

°C

†For information on tape and reel specifications,

NTF6P02T3G

NVF6P02T3G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

CASE 318E

(Note: Microdot may be in either location)

Device

SOT−223

STYLE 3

6P02

ORDERING INFORMATION

DS(on)

http://onsemi.com

−10 AMPERES

P−Channel MOSFET

−20 VOLTS

= Assembly Location

= Year

= Work Week

= Specific Device Code

= Pb−Free Package

= 44 mW (Typ.)

(Pb−Free)

SOT−223

Package

MARKING DIAGRAM

& PIN ASSIGNMENT

Publication Order Number:

Gate

6P02G

Drain

AYW

4000 / Tape &

NTF6P02T3/D

Shipping

Reel

Source

†

Related parts for NVF6P02T3G

NVF6P02T3G Summary of contents

Page 1

... Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified • AEC Q101 Qualified and PPAP Capable − NVF6P02T3G • NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note Vdc −250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = −20 Vdc Vdc ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 12 −2.2 V −10 V −2.0 V −7.0 V −5 −2.4 V −3.2 V −1.8 V −4 −1 −1 −1 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 3000 iss 2400 1800 C rss 1200 C iss C 600 oss C rss 0 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E-03 1.0E-02 1.0E-01 NORMALIZED TO R 0.0175 W 0.0710 W CHIP JUNCTION 0.0154 F 0.0854 F 1.0E+00 1.0E+01 t, TIME (s) Figure 11. FET ...

Page 6

... A 0.08 (0003) A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein ...

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