M48Z08-100PC1 STMicroelectronics, M48Z08-100PC1 Datasheet - Page 11

IC NVSRAM 64KBIT 100NS 28DIP

M48Z08-100PC1

Manufacturer Part Number
M48Z08-100PC1
Description
IC NVSRAM 64KBIT 100NS 28DIP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M48Z08-100PC1

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
64K (8K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.75 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP Module (600 mil), 28-EDIP
Data Bus Width
8 bit
Organization
8 Kb x 8
Interface Type
Parallel
Access Time
100 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.75 V
Operating Current
80 mA
Maximum Operating Temperature
70 C
Minimum Operating Temperature
0 C
Mounting Style
Through Hole
Capacitance, Input
10 pF
Capacitance, Output
10 pF
Current, Input, Leakage
±1 μA
Current, Operating
80 mA
Current, Output, Leakage
±1
Data Retention
11 yrs.
Density
64K
Package Type
PCDIP28
Power Dissipation
1 W
Temperature, Operating
0 to +70 °C
Time, Access
100 ns
Time, Fall
≤5 ns
Time, Rise
≤5 ns
Voltage, Input, High
5.05 to 5.8 V
Voltage, Input, Low
0.8 V
Voltage, Output, High
2.4 V
Voltage, Output, Low
0.4 V
Voltage, Supply
4.75 to 5.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2869-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M48Z08-100PC1
Manufacturer:
NXP
Quantity:
5 000
Part Number:
M48Z08-100PC1
Manufacturer:
ST
0
Part Number:
M48Z08-100PC1
Manufacturer:
ST
Quantity:
20 000
M48Z08, M48Z18
2.4
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
Figure
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, STMicroelectronics recommends
connecting a Schottky diode from V
Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is
recommended for surface mount.
Figure 7.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
7) is recommended in order to provide the needed filtering.
Supply voltage protection
V CC
Doc ID 2424 Rev 7
0.1µF
CC
CC
to V
CC
that drive it to values below V
SS
bus. These transients can be reduced if
(cathode connected to V
V CC
V SS
DEVICE
CC
bus. The energy stored in the
CC
SS
Operation modes
, anode to V
by as much as
AI02169
SS
11/20
).

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