CY7C1354C-166AXI Cypress Semiconductor Corp, CY7C1354C-166AXI Datasheet - Page 20

• Manufacturer Part Number: CY7C1354C-166AXI
• Description: IC SRAM 9MBIT 166MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp
• Type: Synchronousr

Specifications of CY7C1354C-166AXI

• Memory Size: 9M (256K x 36)
• Package / Case: 100-LQFP
• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 3.5 ns
• Maximum Clock Frequency: 166 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 180 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 4
• Operating Supply Voltage: 3.3 V
• Density: 9Mb
• Access Time (max): 3.5ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 166MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 18b
• Package Type: TQFP
• Operating Temp Range: -40C to 85C
• Supply Current: 180mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2119; CY7C1354C-166AXI

Electrical Characteristics
Over the Operating Range
Capacitance
Thermal Resistance
Document Number: 38-05538 Rev. *L
I
I
I
I
I
C
C
C
Θ
Θ
Note
DD
SB1
SB2
SB3
SB4
21. Tested initially and after any design or process changes that may affect these parameters.
Parameter
Parameter
Parameter
IN
CLK
I/O
JA
JC
Input capacitance
Clock input capacitance
Input/output capacitance
V
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
DD
[21]
operating supply
Description
Description
Description
[18, 19]
[21]
(continued)
V
f = f
Max V
≥ V
f = f
Max V
V
f = 0
Max V
V
f = f
Max V
V
T
V
Test conditions follow standard
test methods and procedures
for measuring thermal
impedance, per EIA/JESD51.
DD
IN
IN
IN
A
DD
IH
≤ 0.3 V or V
≤ 0.3 V or V
MAX
MAX
MAX
≥ V
= 25 °C, f = 1 MHz,
= Max, I
= 3.3 V V
or V
DD
DD
DD
DD
IH
Test Conditions
= 1/t
= 1/t
= 1/t
Test Conditions
, device deselected, V
, device deselected,
, device deselected,
, device deselected,
or V
IN
≤ V
OUT
CYC
CYC
CYC
IN
DDQ
IN
IN
IL
≤ V
= 0 mA,
,
> V
> V
= 2.5 V
IL
Test Conditions
DDQ
DDQ
, f = 0
− 0.3 V,
− 0.3 V,
IN
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
All speed grades
4 ns cycle, 250 MHz
5 ns cycle, 200 MHz
6 ns cycle, 166 MHz
All speed grades
100 TQFP
100 TQFP
29.41
Max
6.13
Max
5
5
5
119 BGA
119 BGA
CY7C1354C, CY7C1356C
Max
34.1
14.0
Max
5
5
7
Min
–
–
–
–
–
–
–
–
–
–
–
165 FBGA
165 FBGA
Max
16.8
Max
3.0
5
5
7
Max
250
220
180
130
120
120
100
110
110
40
40
Page 20 of 32
°C/W
°C/W
Unit
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
pF
pF
pF
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