CY7C1347G-250AXC Cypress Semiconductor Corp, CY7C1347G-250AXC Datasheet - Page 16

IC SRAM 4.5MBIT 250MHZ 100LQFP

CY7C1347G-250AXC

Manufacturer Part Number
CY7C1347G-250AXC
Description
IC SRAM 4.5MBIT 250MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Synchronousr
Datasheet

Specifications of CY7C1347G-250AXC

Memory Size
4.5M (128K x 36)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
250MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
2.6 ns
Maximum Clock Frequency
250 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
325 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Number Of Ports
4
Operating Supply Voltage
3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1347G-250AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1347G-250AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document #: 38-05516 Rev. *I
18. In this diagram, when CE is LOW, CE
19. Full width write can be initiated by either GW LOW, or by GW HIGH, BWE LOW, and BW
Data Out (Q)
Data In (D)
ADDRESS
BW[A :B]
ADSP
ADSC
BWE,
ADV
CLK
GW
OE
CE
BURST READ
High-Z
t ADS
t CES
t AS
A1
t ADH
t CEH
t AH
t CH
t
OEHZ
Byte write signals are
ignored for first cycle when
ADSP initiates burst
t CYC
(continued)
t ADS
1
t CL
t DS
is LOW, CE
Single WRITE
D(A1)
t ADH
t DH
2
is HIGH, and CE
A2
Figure 6. Write Cycle Timing
D(A2)
DON’T CARE
3
is LOW. When CE is HIGH, CE
D(A2 + 1)
t WES
BURST WRITE
t WEH
UNDEFINED
D(A2 + 1)
x
LOW.
ADV suspends burst
[18, 19]
D(A2 + 2)
1
ADSC extends burst
is HIGH, CE
D(A2 + 3)
2
is LOW, or CE
t ADS
A3
D(A3)
t ADH
t
ADVS
t WES
Extended BURST WRITE
3
D(A3 + 1)
is HIGH.
t
t WEH
ADVH
CY7C1347G
D(A3 + 2)
Page 16 of 24
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