M27C4001-10F1 STMicroelectronics, M27C4001-10F1 Datasheet - Page 14

• Manufacturer Part Number: M27C4001-10F1
• Description: IC EPROM 4MBIT 100NS 32CDIP
• Manufacturer: STMicroelectronics

Specifications of M27C4001-10F1

• Format - Memory: EPROMs
• Memory Type: UV EPROM
• Memory Size: 4M (512K x 8)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-CDIP (0.600", 15.24mm) Window
• Capacitance, Input: 6 pF
• Capacitance, Output: 12 pF
• Current, Input, Leakage: ±10 μA (Read)
• Current, Operating: 30 mA (Read)
• Current, Output, Leakage: ±10 μA (Read)
• Current, Supply: 30 mA
• Density: 4M
• Organization: 512K×8
• Package Type: FDIP32W
• Temperature, Operating: 0 to +70 °C
• Temperature, Operating, Maximum: 70 °C
• Temperature, Operating, Minimum: 0 °C
• Time, Access: 100 ns
• Time, Fall: ≤20 ns
• Time, Programmable: 100 μs
• Time, Rise: ≤20 ns
• Voltage, Input, High: 6 V (Read)
• Voltage, Input, High Level: 2 V (Min.)
• Voltage, Input, Low: 0.8 V (Read)
• Voltage, Input, Low Level: -0.3 V (Max.)
• Voltage, Output, High: 4.3 V (Read)
• Voltage, Output, Low: 0.4 V (Read)
• Voltage, Programmable: 11.5 V (Min.)
• Voltage, Supply: 5 V
• Access Time: 35ns
• Supply Voltage Range: 4.5V To 5V
• No. Of Pins: 32
• Operating Temperature Range: 0°C To +70°C
• Voltage, Vcc: 5V
• Ic Interface Type: Parallel
• Programming Voltage: 12.75V
• Rohs Compliant: Yes
• Memory Configuration: 512K X 8
• Memory Case Style: FDIPW
• Supply Voltage Max: 5V
• Operating Temperature Max: 70°C
• Operating Temperature Min: 0°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-1658-5

DC and AC parameters
14/25
Table 6.
1. T
2. Sampled only, not 100% tested.
Table 7.
1. T
2. V
3. Maximum DC voltage on Output is V
Table 8.
1. T
2. V
.
Symbol
Symbol
V
I
I
V
V
V
V
Symbol
I
I
V
V
I
CC1
CC2
I
V
I
V
IH
I
I
LO
CC
PP
CC
PP
A
OH
A
OH
A
CC
CC
C
LI
OL
LI
OL
IH
ID
IL
IL
(3)
C
= 25 °C, f = 1 MHz.
= 0 to 70 °C or –40 to 85 °C; V
= 25 °C; V
OUT
IN
must be applied simultaneously with or before V
must be applied simultaneously with or before V
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby)
CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
Capacitance
Read Mode DC Characteristics
Programming Mode DC Characteristics
CC
Input Capacitance
Output Capacitance
= 6.25V ± 0.25V; V
Parameter
Parameter
Parameter
(1) (2)
CC
PP
CC
= 5V ± 5% or 5V ± 10%; V
= 12.75V ± 0.25V.
+0.5V.
Test Condition
I
OUT
Test Condition
I
V
OH
0 V
I
V
E = V
OL
Test Condition
OUT
0V V
E > V
I
I
IN
0V V
OH
OH
I
E = V
= 0mA, f = 5MHz
OL
V
PP
= –400 A
PP
(1) (2)
= 2.1mA
= 0V
IN
PP
E = V
= 0V
= –400 A
= –100 A
IL
and removed simultaneously or after V
and removed simultaneously or after V
= 2.1mA
CC
OUT
, G = V
IN
= V
V
IL
CC
– 0.2V
IH
V
CC
V
CC
PP
CC
(1) (2)
IL
= V
,
CC
–0.3
11.5
Min
Min
2.4
2
V
CC
–0.3
Min
2.4
– 0.7V
2
V
CC
Max
Max
12.5
±10
0.8
0.4
12
50
50
6
+ 0.5
V
CC
Max
±10
±10
100
0.8
0.4
30
10
PP.
PP
1
M27C4001
+ 1
.
.
Unit
Unit
pF
pF
mA
mA
V
V
V
V
V
Unit
A
mA
mA
V
V
V
V
V
A
A
A
A