CY62128EV30LL-45ZAXI Cypress Semiconductor Corp, CY62128EV30LL-45ZAXI Datasheet - Page 4

IC SRAM 1MBIT 45NS 32STSOP

CY62128EV30LL-45ZAXI

Manufacturer Part Number
CY62128EV30LL-45ZAXI
Description
IC SRAM 1MBIT 45NS 32STSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet

Specifications of CY62128EV30LL-45ZAXI

Memory Size
1M (128K x 8)
Package / Case
32-sTSOP
Format - Memory
RAM
Memory Type
SRAM
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
45 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.2 V
Maximum Operating Current
16 mA
Organization
128 K x 8
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
2.5 V, 3.3 V
Density
1Mb
Access Time (max)
45ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3V
Address Bus
17b
Package Type
STSOP-I
Operating Temp Range
-40C to 85C
Supply Current
16mA
Operating Supply Voltage (min)
2.2V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2066
CY62128EV30LL-45ZAXI

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Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature................................. –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground
potential ........................................–0.3 V to V
DC voltage applied to outputs
in high Z State
Electrical Characteristics
(Over the Operating Range)
Notes
Document #: 38-05579 Rev. *I
V
V
V
V
I
I
I
I
I
Parameter
4. V
5. V
6. Full device AC operation assumes a 100
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
8. Chip enables (CE
IX
OZ
CC
SB1
SB2
OH
OL
IH
IL
[8]
IL(min)
IH(max)
= –2.0 V for pulse durations less than 20 ns.
= V
CC
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
V
Automatic CE
power-down
current — CMOS inputs
Automatic CE
power-down
current — CMOS inputs
[4, 5]
CC
+ 0.75 V for pulse durations less than 20 ns.
1
..........................–0.3 V to V
operating supply current
and CE
Description
2
) must be at CMOS level to meet the I
µ
s ramp time from 0 to V
CC(max)
CC(max)
I
I
I
I
V
V
V
V
GND < V
GND < V
f = f
f = 1 MHz
CE
V
f = f
f = 0 (OE and WE), V
CE
V
f = 0, V
OH
OH
OL
OL
CC
CC
CC
CC
IN
IN
1
1
= 0.1 mA
= 2.1 mA, V
max
> V
max
= –0.1 mA
= –1.0 mA, V
> V
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
= 2.2 V to 2.7 V
= 2.2 V to 2.7 V
> V
> V
+ 0.3 V
+ 0.3 V
CC
CC
CC
(address and data Only),
= 1/t
SB2
CC
CC
CC
I
O
< V
< V
– 0.2 V, V
= 3.60 V
(min) and 200
– 0.2 V or V
0.2 V, CE
/ I
– 0.2 V, CE
RC
CCDR
Test Conditions
CC
CC
CC
, output disabled
CC
spec. Other inputs can be left floating.
> 2.70 V
> 2.70 V
IN
DC input voltage
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage.......................................... > 2001 V
(MIL-STD-883, method 3015)
Latch-up current ..................................................... > 200 mA
Operating Range
V
0 mA CMOS levels
CC
CY62128EV30LL
µ
< 0.2 V
2
IN
CC
2
s wait time after V
< 0.2 V
= 3.60 V
< 0.2 V
< 0.2 V,
= V
Device
CCmax
I
OUT
CC
[4, 5]
stabilization.
=
......................–0.3 V to V
Industrial
Range
CC
–0.3
–0.3
Min
2.0
2.4
1.8
2.2
–1
–1
= V
CY62128EV30 MoBL
CC(typ)
45 ns (Industrial)
, T
–40 °C to +85 °C 2.2 V to
Typ
A
1.3
Temperature
11
= 25 °C.
1
1
Ambient
[7]
V
V
CC(max)
CC
CC
Max
0.4
0.4
0.6
0.8
2.0
+1
+1
16
+ 0.3 V
+ 0.3 V
4
4
Page 4 of 15
+ 0.3 V
V
3.6 V
CC
Unit
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
[6]
®
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