M93C66-RMB6TG STMicroelectronics, M93C66-RMB6TG Datasheet - Page 23

• Manufacturer Part Number: M93C66-RMB6TG
• Description: IC EEPROM 4KBIT 1MHZ 8UFDFPN
• Manufacturer: STMicroelectronics

Specifications of M93C66-RMB6TG

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 4K (512 x 8 or 256 x 16)
• Speed: 1MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-MLP, 8-UFDFPN
• Memory Configuration: 512 X 8, 256 X 16
• Interface Type: Serial, Microwire
• Clock Frequency: 2MHz
• Supply Voltage Range: 1.8V To 5.5V
• Memory Case Style: DFN
• No. Of Pins: 8
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8708-2; M93C66-RMB6TG

M93C86, M93C76, M93C66, M93C56, M93C46
Table 16.
1. Please note that the input and output levels defined in this table are compatible with TTL logic levels and
Table 17.
Symbol
Symbol
V
V
V
V
I
V
I
V
are NOT fully compatible with CMOS levels (as defined in
V
I
OH
I
CC1
V
I
I
OL
CC1
IH
I
LO
CC
I
CC
IL
LO
OH
OL
LI
LI
IH
IL
(1)
(1)
(1)
(1)
Supply current (CMOS
inputs)
Supply current (Standby)
Input leakage current
Output leakage current
Supply current
Supply current (Standby)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Input leakage current
Output leakage current
Input low voltage (D, C, S)
Input high voltage (D, C, S)
Output low voltage (Q)
Output high voltage (Q)
DC characteristics (M93Cx6, device grade 3)
DC characteristics (M93Cx6-W, device grade 6)
Parameter
Parameter
Doc ID 4997 Rev 11
V
V
V
V
V
CC
CC
CC
V
CC
CC
0V V
V
0V V
V
V
pin7 = V
V
CC
pin7 = V
V
CC
CC
= 2.5 V, S = V
CC
CC
= 2.5 V, S = V
= 5 V, S = V
ORG = V
CC
= 5 V, S = V
= 5 V, S = V
ORG = V
= 2.5 V, I
Test condition
V
= 5 V, I
V
= 2.5 V, I
Test condition
= 5 V, I
= 5 V, I
OUT
= 5 V, I
0V V
OUT
CC
CC
0V V
Q = open
Q = open
Q = open
CC
CC
= 5 V ± 10%
= 5 V ± 10%
V
Table
V
, V
OH
IN
SS
, V
OH
SS
IN
OL
CC
OL
CC
OH
OL
IH
SS
IH
SS
SS
or V
= –400 µA
or V
V
, Q in Hi-Z
IH
= –400 µA
= 2.1 mA
, Q in Hi-Z
V
= 2.1 mA
, f = 2 MHz,
SS
= –100 µA
, f = 2 MHz,
= 100 µA
CC
17)
CC
, f = 2 MHz,
, C = V
or Hi-Z
or Hi-Z
, C = V
CC
CC
,
,
SS
SS
,
,
DC and AC parameters
V
0.7 V
0.8 V
0.8 V
–0.45
CC
–0.45
Min.
Min.
2
–0.2
CC
CC
CC
V
0.2 V
V
Max.
Max.
CC
CC
±2.5
±2.5
±2.5
±2.5
0.4
0.2
0.8
0.4
15
2
1
5
2
+ 1
+ 1
CC
Unit
Unit
23/36
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V