NCP335FCT2G ON Semiconductor, NCP335FCT2G Datasheet - Page 9

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NCP335FCT2G

Manufacturer Part Number
NCP335FCT2G
Description
Power Switch ICs - Power Distribution
Manufacturer
ON Semiconductor
Datasheet

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Example of application definition.
T
T
R
R
I: load DC current.
Taking into account of Rtheta obtain with:
1 oz, 2 layers: 100°C/W.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
A
J
NCP334FCT2G
NCP335FCT2G
T
q
DS(on)
: Junction Temperature.
: Ambient Temperature.
J
= Thermal resistance between IC and air, through PCB.
* T
: Intrinsic resistance of the IC MOSFET.
A
+ R
Device
qJA
Pd + R
qJA
Marking
Figure 14. Routing Example 2 oz, 4 Layers, 605C/W
AD
AA
R
DS(on)
I
2
WLCSP 0.96 x 0.96 mm
WLCSP 0.96 x 0.96 mm
http://onsemi.com
(Pb−Free)
(Pb−Free)
Package
9
At 2 A, 25°C ambient temperature, R
4.2 V, the junction temperature will be:
Taking into account of R
2 oz, 4 layers: 60°C/W.
At 2 A, 25°C ambient temperature, R
4.2 V, the junction temperature will be:
T
J
T
+ T
J
+ T
A
) R
A
) R
q
q
Pd + 25 ) 0.042
Pd + 25 ) 0.042
q
obtain with:
3000 / Tape & Reel
3000 / Tape & Reel
Shipping
2
DS(on)
DS(on)
2
2
2
100 + 41.8° C W
42 mW @ V
42 mW @ V
60 + 35° C.
IN
IN

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