SIP32452DB-T2-GE1 Vishay/Siliconix, SIP32452DB-T2-GE1 Datasheet - Page 10

• Manufacturer Part Number: SIP32452DB-T2-GE1
• Description: Power Switch ICs - Power Distribution 1V 55mOhms Load Switch
• Manufacturer: Vishay/Siliconix

Specifications of SIP32452DB-T2-GE1

• Product Category: Power Switch ICs - Power Distribution
• Rohs: yes
• On Resistance (max): 65 mOhms
• On Time (max): 25 us
• Off Time (max): 1 us
• Operating Supply Voltage: 0.9 V to 2.5 V
• Maximum Operating Temperature: + 85 C
• Package / Case: CSP-4
• Maximum Power Dissipation: 196 mW
• Minimum Operating Temperature: - 40 C
• Switch Current (max): 1.2 A

SiP32451, SiP32452, SiP32453
Vishay Siliconix
PACKAGE OUTLINE
WCSP4: 4 Bumps (2 x 2, 0.4 mm Pitch, 208 µm Bump Height, 0.8 mm x 0.8 mm Die Size)
Notes:
1. Laser mark on the backside surface of die.
2. Bumps are SAC396.
3. 0.050 max. coplanarity.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
10
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Dimension
0.4
Recommended Land Pattern
All dimensions in millimeters
A1
D
A
b
e
0.4
www.vishay.com/ppg?63315
0.515
0.250
0.720
4 x Ø 0.150 to 0.200
Solder mask dia.
Min.
For technical questions, contact:
-
MILLIMETERS
Pad diameter + 0.1
Nom.
0.530
0.208
0.260
0.400
0.760
This document is subject to change without notice.
Index-Bump A1
Mark on backside of die
B
MAX.
0.545
0.270
0.800
A
[e-mail]
1
A
W
B
2
0.0202
0.0098
0.0182
Min.
4 x Ø b
2
D
e
INCHES
0.0208
0.0081
0.0102
0.0157
0.0193
Nom.
1
Bump Note 2
S12-2345-Rev. D, 8-Oct-12
B
A
Document Number: 63315
www.vishay.com/doc?91000
MAX.
0.0214
0.0106
0.0203