BD70GA3WEFJ-E2 ROHM Semiconductor, BD70GA3WEFJ-E2 Datasheet - Page 14

• Manufacturer Part Number: BD70GA3WEFJ-E2
• Description: Low Dropout Controllers - LDO LDO Reg Pos 7.0V 0.3A
• Manufacturer: ROHM Semiconductor

Specifications of BD70GA3WEFJ-E2

• Rohs: yes
• Input Voltage Max: 14 V
• Output Voltage: 7 V
• Output Current: 0.3 A
• Output Type: Fixed
• Number Of Outputs: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: HTSOP-8
• Input Voltage Min: 4.5 V
• Maximum Power Dissipation: 2110 mW
• Minimum Operating Temperature: - 25 C

●Evaluation Board Circuit
TSZ22111･15･001
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
BDxxGA3WEFJ
●Evaluation Board Parts List
●Board Layout
Designation
・FB pin has comparatively high impedance, and is apt to be effected by noise, so floating capacity should be minimum as
・Please take GND pattern space widely, and design layout to be able to increase radiation efficiency.
・For output voltage setting (BD00GA3WEFJ)
･Input capacitor C
Output capacitor C
please use several through hole.
possible. Please be careful in wiring drawing
Output voltage can be set by FB pin voltage（0.800V typ.）and external resistance R1, R2.
R1
R2
R3
R4
R5
R6
C1
C2
C3
（The use of resistors with R1+R2=1k to 90kΩ is recommended）
V
O
= V
8.2kΩ
43kΩ
Value
1µF
‐
‐
‐
‐
‐
‐
FB
×
IN
C6
C5
C7
of V
OUT
R1+R2
MCR01PZPZF4302
MCR01PZPZF8201
CC
also should be placed close to IC pin as possible. In case connected to inner layer GND plane,
CM105B105K16A
R2
V
O
(V
V
CC
Part No.
IN
) should be placed very close to V
(
‐
‐
‐
‐
‐
‐
GND
V
IN
)
V
O
R 1
C
IN
R1
R2
KYOCERA
C
Company
OUT
ROHM
ROHM
R2
‐
‐
‐
‐
1
2
EN
3
4
FB
14/19
GND
N.C.
V
GND
O
Designation
FIN
U1
C10
CC
C4
C5
C6
C7
C8
C9
U1
U2
(V
N.C
N.C
V
EN
IN
CC
) pin as possible, and used broad wiring pattern.
7
5
8
6
Value
1µF
‐
‐
‐
‐
‐
‐
‐
SW1
V
CC
CM105B105K16A
TSZ02201-0R6R0A600180-1-2
BD00GA3WEFJ
Part No.
C3
C2
C1
EN
‐
‐
‐
‐
‐
‐
20.July.2012 Rev.001
Datasheet
KYOCERA
Company
ROHM
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