BD30IC0WEFJ-E2 ROHM Semiconductor, BD30IC0WEFJ-E2 Datasheet - Page 18

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BD30IC0WEFJ-E2

Manufacturer Part Number
BD30IC0WEFJ-E2
Description
Low Dropout Controllers - LDO LDO Reg Pos 3.0V 1A
Manufacturer
ROHM Semiconductor
Datasheet

Specifications of BD30IC0WEFJ-E2

Rohs
yes
Input Voltage Max
5.5 V
Output Voltage
3 V
Output Current
1 A
Load Regulation
75 mV
Output Type
Fixed
Number Of Outputs
1
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
HTSOP-8
Input Voltage Min
2.4 V
Maximum Power Dissipation
2110 mW
Minimum Operating Temperature
- 25 C
●Evaluation Board Circuit
●Evaluation Board Parts List
●Board Layout
TSZ22111・15・001
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
BDxxIC0WEFJ / BDxxIC0WHFV
・Input capacitor C
・FB pin has comparatively high impedance, and is apt to be effected by noise, so floating capacity should be minimum as
・Please take GND pattern space widely, and design layout to be able to increase radiation efficiency.
・For output voltage setting
Designation
Output capacitor C
please use several through hole.
possible. Please be careful in wiring drawing
Output voltage can be set by FB pin voltage(0.800V typ.)and external resistance R1, R2.
(The use of resistors with R1+R2=1k to 90k is recommended)
R1
R2
R3
R4
R5
R6
C1
C2
C3
V
O
= V
7.5kΩ
16kΩ
Value
1µF
FB
×
IN
C6
C5
C7
of V
OUT
MCR01PZPZF1602
MCR01PZPZF7501
R1+R2
CM105B105K16A
CC
also should be placed close to IC pin as possible. In case connected to inner layer GND plane,
R2
V
O
(Vin) should be placed very close to V
V
Part No.
CC
(
GND
V
IN
)
V
O
R 1
KYOCERA
C
Company
IN
R1
R2
ROHM
ROHM
C
OUT
R2
1
2
EN
3
4
FB
18/23
GND
N.C.
V
GND
O
Designation
FIN
C10
U1
C4
C5
C6
C7
C8
C9
U1
U2
CC
(V
N.C
N.C
V
EN
IN
CC
) pin as possible, and used broad wiring pattern.
Value
7
5
8
6
1µF
CM105B105K10A
SW1
BD00IC0WEFJ
TSZ02201-0R6R0A600160-1-2
Part No.
C3
C2
C1
EN
6.July.2012 Rev.001
KYOCERA
Company
ROHM
Datasheet

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