E520.35B62AC ELMOS Semiconductor, E520.35B62AC Datasheet
E520.35B62AC
Specifications of E520.35B62AC
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E520.35B62AC Summary of contents
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... GPIO ADC GPIO UART ELMOS Semiconductor AG This document contains information on a new product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice. Brief functional description The LIN-SBC with voltage regulator provides a LIN tranceiver, the peripheral supply, reset generation for the µC and a watchdog. ...
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... D_I 18 PV A_O 19 GND HV_S 20 VDD HV_S A = Analog Digital Supply Input Output Bidirectional High Voltage ELMOS Semiconductor AG Description Battery supply for the voltage divider not connected local wake up input not connected battery supply voltage ground not connected not connected reset output ...
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... ADVANCE PRODUCT INFORMATION JUL 26, 2011 1.2 Package Reference The device is assembled in a QFN20L5 package according to JEDEC standard MO-220, Issue June 2006. The referenced JEDEC variant is VHHC-2. 1.3 Package Pinout VBAT n.c. WAKE_N n.c. VS ELMOS Semiconductor ELA-0120 3 E520. Fig. 1: Package Pinout Data Sheet E520.35 TXD ...
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... LIN SBC with Voltage Regulator and Watchdog ADVANCE PRODUCT INFORMATION JUL 26, 2011 2 Block Diagram ELMOS Semiconductor AG Fig. 2: Block Diagram Data Sheet E520.35 QM-No.: 25DS0060E.00 ...
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... DC voltage at pin VDD (3.3V device) DC current at pin VDD DC input voltage at pin LIN, VBAT TRAN input voltage at pin LIN, VBAT DC Voltage Level for pin EN,RES_N,RXD,TXD,WDIN,WDOSC,WDD M,DIV_ON DC Current Level for pin EN,RES_N,RXD,TXD,WDIN,WDOSC,WDD M,DIV_ON ELMOS Semiconductor AG Condition Symbol continuous V continuous T JUNC continuous T continuous, 33kΩ ...
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... R=33 WAKE_N kΩ AEC-Q100-011 ESD protection at all pins (CDM), R=1 Ω chiplevel AEC-Q100-003 ESD protection at all pins (MM), C=200 pF chiplevel 1) verified incl. capacitance on pin LIN of 0pF and 220pF, on pin VSUP of C ELMOS Semiconductor AG Condition Symbol V LIN,ESDHBM to GND V VSUP,ESDHBM to GND V 1) LIN,ESD to GND ...
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... IO current at each pin, if not specified otherwise 4 Thermal Characteristics Description Thermal resistance junction to ambient QFN20L5 package (1) Values are based on method according to JEDEC JESD-51-5. ELMOS Semiconductor AG Condition Symbol V S,FUNC -60mA < S,FL,LR -60mA < ...
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... VDD regulator after entering sleep mode ELMOS Semiconductor AG Condition Symbol LIN dominant, I S,ACT,DOM I =0mA DD ...
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... Local Wake Up leakage current input low level input high level input hysteresis, not production tested pull up current input debouncing filter time ELMOS Semiconductor AG Condition Symbol V S,POR V S,PD V DD,RSTA3.3 V DD,RSTA5.0 V DD,RSTD3 ...
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... LIN Transceiver functional range LIN transceiver recessive output voltage dominant output voltage dominant output voltage receiver dominant level receiver recessive level LIN bus center voltage receiver hysteresis ELMOS Semiconductor AG Condition Symbol active mode V DD,ACT5.0 VS > 7V active mode V DD,ACT3.3 ...
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... LIN bus puls receiver debounce time wake-up debounce time ELMOS Semiconductor AG Condition Symbol LIN VS,MAX ...
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... Tamb = +25°C. Positive currents flow into the device pins.) S Description 1) Duty cycle 1 1) Duty cycle 2 1) Duty cycle 3 1) Duty cycle 4 receive data baud rate transmit data baud rate 1) Bus load conditions (C ELMOS Semiconductor AG Condition V (max) LIN,THREC =0.744 (max) LIN,THDOM =0.581 =7- ...
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... WDIN, WDDM pull down resistor at pins WDIN, WDDM reference current reference resistor watchdog oscillator periode for 10kΩ resistance watchdog oscillator periode for 100kΩ resistance first trigger open window ELMOS Semiconductor AG Condition Symbol V EN,INL V EN,INH V =5. ...
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... V input current BAT reverse current Maximum output Voltage at PV Maximum output Voltage at PV divider temperature drift, not production testes input low level range input high level range input pull down resistance ELMOS Semiconductor AG Condition Symbol t WD,CYC t WD,OW t WD,CW t WD,RES t WD,CMD 5 V < ...
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... Note: The voltage regulator over temperature shut down results in a transition to Power-on mode and the regulator is switched off. The voltage regulator will be switched on if the junction temperature falls below the specified temperature hysteresis T ELMOS Semiconductor AG . HYST Data Sheet E520 ...
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... EMI at the inputs of the wake-up sources. 6.1.6 Flash mode The flash mode allows a higher transmit baud rate up to 115 kBds and the receive baud rate up to 250 kBds. For further information see chapter „LIN flash mode“. ELMOS Semiconductor AG 2AM FMTO DD,OFFDEL Data Sheet E520 ...
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... Power-on low on Active high on Standby low on Sleep low off ELMOS Semiconductor AG Fig. 3: SBC State Diagram RXD TXD high ohmic high ohmic strong pull down weak pull up output output for wake-up if remote wake-up; request strong pull down output if local wake- ...
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... The LIN BUS Interface is conform to LIN Physical Layer Specification Revision 2.1 and can be used for master or slave applications. The device has an internal slave termination implemented. Master termination has to be applied externally. Fig. 4: LIN transceiver physical layer timing ELMOS Semiconductor AG RXD TXD pull up for LIN high level input for recessive ...
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... In order to prevent the LIN bus from being permanent dominant in case of permanent LOW level at pin TXD a time-out is implemented. The LIN transmitter is disabled after t negative edge on pin TXD and reset by a positive edge on pin TXD. ELMOS Semiconductor AG within the time period t . The flash mode must be retriggered within ...
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... WAKE_N pulled to low. The pin WAKE_N is an high voltage input with pull up current source I filter. If the local wake-up is not used in application, the pin WAKE_N has to be connected to pin VS. ELMOS Semiconductor AG Fig. 6: Local wake-up in mode Sleep Data Sheet E520 ...
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... LIN SBC with Voltage Regulator and Watchdog ADVANCE PRODUCT INFORMATION JUL 26, 2011 ELMOS Semiconductor AG Fig. 7: Local wake-up in mode Standby Data Sheet E520.35 QM-No.: 25DS0060E.00 ...
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... The device can be woke up remotely from sleep and standby mode via pin LIN. A falling edge at the LIN pin followed by a dominant bus level V with a following rising LIN edge result in a remote wake-up. The wake-up request is signalized to microcontroller by a low state at pin RXD. ELMOS Semiconductor AG Fig. 8: Remote wake-up in mode Sleep Data Sheet E520.35 ...
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... The wake-up request flag and the wake-up source flag are reset after entering active mode. The wake- up source signal at TXD and RXD is interrupted while pin EN is set to high in order to check flash mode request at TXD. ELMOS Semiconductor AG Data Sheet E520.35 QM-No.: 25DS0060E.00 ...
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... WD,FOW The watchog is disabled in standby- and sleep mode. The watchdog starts with first open window after reentering active- or power-on mode. Fig. 10: Watchdowg triggger in closed window (CW) Fig. 11: No watchdowg trigger in first open window (FOW) ELMOS Semiconductor AG . WD,OSCXX . Data Sheet E520.35 ...
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... LIN SBC with Voltage Regulator and Watchdog ADVANCE PRODUCT INFORMATION JUL 26, 2011 Fig. 12: No watchdowg trigger in open window (OW) ELMOS Semiconductor AG Fig. 13: Watchdog safe trigger area Data Sheet E520.35 QM-No.: 25DS0060E.00 ...
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... The voltage divider is activated by the digital pin DIV_ON. The divided input voltage is available at pin PV. In sleep mode the voltage divide is disabled to reduce sleep current consumption. Fig. 14: Typical characteristic of the voltage divider ELMOS Semiconductor AG is defined by the external resistance μ s ...
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... V S,POR V 2V S,PD VDD DD,RSTD DD,RSTA 2V RES_N 5V 2V ELMOS Semiconductor AG threshold. The slope of the falling edge after VDD regulator S,PD t RES_N t RES_N Fig. 16: Power up and down behaviour mode Data Sheet E520.35 threshold and is switched off S,POR level again. S,POR t Slope depends on ...
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... VDD reset threshold level V 6.7.6 LIN loss of ground In case of battery voltage loss (pin VS) and ground loss (pin GND) reverse current from the LIN bus line is limited. ELMOS Semiconductor AG Termination weak pull down weak pull up weak pull down weak pull down Table 4: Fail-Save Pin-Termination Table ...
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... ADVANCE PRODUCT INFORMATION JUL 26, 2011 6.7.7 Microcontroller reset In case the voltage at pin VDD drops below the reset threshold V activated and pulled down to GND. The reset pin RES_N is released after t exceeds the reset deassert level V ELMOS Semiconductor AG . DD,RSTDXX Fig. 17: RES_N in case of VDD UV events Data Sheet E520.35 ...
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... It is the responsibility of the buyer, when utilizing ELMOS Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of an ELMOS Semiconductor AG Product could cause loss of human life, body injury or damage to property. In development your designs, please ensure that ELMOS Semiconductor AG products are used within specified operating ranges as set forth in the most recent product specifica - tions ...