74AHC14PW-Q100 NXP Semiconductors, 74AHC14PW-Q100 Datasheet
74AHC14PW-Q100
Specifications of 74AHC14PW-Q100
Related parts for 74AHC14PW-Q100
74AHC14PW-Q100 Summary of contents
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Hex inverting Schmitt trigger Rev. 1 — 9 July 2012 1. General description The 74AHC14-Q100; 74AHCT14-Q100 is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL (LSTTL specified in compliance with JEDEC ...
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... Ordering information Type number Package Temperature range Name 74AHC14-Q100 40 C to +125 C 74AHC14D-Q100 40 C to +125 C 74AHC14PW-Q100 40 C to +125 C 74AHC14BQ-Q100 74AHCT14-Q100 40 C to +125 C 74AHCT14D-Q100 74AHCT14PW-Q100 40 C to +125 C 74AHCT14BQ-Q100 40 C to +125 C 4. Functional diagram ...
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... NXP Semiconductors 5. Pinning information 5.1 Pinning 74AHC14-Q100 74AHCT14-Q100 GND 7 Fig 4. Pin configuration SO14 and TSSOP14 5.2 Pin description Table 2. Pin description Symbol Pin GND ...
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... NXP Semiconductors 6. Functional description [1] Table 3. Function table Input [ HIGH voltage level LOW voltage level. 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC V input voltage ...
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... NXP Semiconductors 9. Static characteristics Table 6. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 74AHC14-Q100 V HIGH-level output voltage = 50 50 50 4.0 mA 8.0 mA LOW-level ...
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... NXP Semiconductors 10. Dynamic characteristics Table 7. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions 74AHC14-Q100 t propagation nA to nY; see pd delay power MHz; V ...
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... NXP Semiconductors 11. Waveforms Measurement points are given in V and V are typical voltage output levels that occur with the output load Fig 6. Input to output propagation delays Table 8. Measurement points Type 74AHC14-Q100 74AHCT14-Q100 Test data is given in Table Definitions test circuit Termination resistance should be equal to output impedance Z ...
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... NXP Semiconductors Table 9. Test data Type Input V I 74AHC14-Q100 V CC 74AHCT14-Q100 3.0 V 12. Transfer characteristics Table 10. Transfer characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); see Symbol Parameter Conditions 74AHC14-Q100 V positive-going threshold voltage negative-going V = 3.0 V T ...
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... NXP Semiconductors 1 (mA Fig 10. Typical 74AHC transfer characteristics 74AHC_AHCT14_Q100 Product data sheet 74AHC14-Q100; 74AHCT14-Q100 mna411 I CC (mA ( (mA All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 July 2012 ...
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... NXP Semiconductors (mA 4 Fig 11. Typical 74AHCT transfer characteristics 14. Application information f = For 74AHC14-Q100: f For 74AHCT14-Q100: Fig 12. Relaxation oscillator 74AHC_AHCT14_Q100 Product data sheet 74AHC14-Q100; 74AHCT14-Q100 mna414 ( mna035 1 1 ------------------------ ...
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... NXP Semiconductors 15. Package outline SO14: plastic small outline package; 14 leads; body width 3 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...
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... NXP Semiconductors TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4 pin 1 index 1 e DIMENSIONS (mm are the original dimensions) A UNIT max. 0.15 0.95 mm 1.1 0.25 0.05 0.80 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. ...
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... NXP Semiconductors DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 14 terminals; body 2 0.85 mm terminal 1 index area terminal 1 index area DIMENSIONS (mm are the original dimensions) (1) A UNIT max. 0.05 0. 0.2 0.00 0.18 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. ...
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... NXP Semiconductors 16. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal-Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model LSTTL Low-power Schottky Transistor-Transistor Logic MM Machine Model MIL Military 17. Revision history Table 12. Revision history Document ID Release date Data sheet status 74AHC_AHCT14_Q100 v ...
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... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations ...
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... NXP Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 5 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 5.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Functional description . . . . . . . . . . . . . . . . . . . 4 7 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 11 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 12 Transfer characteristics . . . . . . . . . . . . . . . . . . 8 13 Transfer characteristics waveforms ...