74AHC244PW-Q100,11 NXP Semiconductors, 74AHC244PW-Q100,11 Datasheet

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74AHC244PW-Q100,11

Manufacturer Part Number
74AHC244PW-Q100,11
Description
Buffers & Line Drivers
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 74AHC244PW-Q100,11

Rohs
yes
Number Of Input Lines
8
Number Of Output Lines
8
Polarity
Non-Inverting
Supply Voltage - Max
5.5 V
Supply Voltage - Min
2 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-20
Logic Family
74AHC
Logic Type
CMOS
Maximum Power Dissipation
500 mW
Minimum Operating Temperature
- 40 C
Output Type
3-State
Propagation Delay Time
10.5 ns
Supply Current
75 mA
1. General description
2. Features and benefits
The 74AHC244-Q100; 74AHCT244-Q100 is a high-speed Si-gate CMOS device.
The 74AHC244-Q100; 74AHCT244-Q100 has octal non-inverting buffer/line drivers with
3-state outputs. The 3-state outputs are controlled by the output enable inputs (nOE). A
HIGH on nOE causes the outputs to assume a high-impedance OFF-state.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
74AHC244-Q100;
74AHCT244-Q100
Octal buffer/line driver; 3-state
Rev. 1 — 9 July 2012
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Balanced propagation delays
All inputs have a Schmitt trigger action
Inputs accept voltages higher than V
For 74AHC244-Q100 only: operates with CMOS input levels
For 74AHCT244-Q100 only: operates with TTL input levels
ESD protection:
Multiple package options
Specified from 40 C to +85 C and from 40 C to +125 C
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0 )
CC
Product data sheet

Related parts for 74AHC244PW-Q100,11

74AHC244PW-Q100,11 Summary of contents

Page 1

... Rev. 1 — 9 July 2012 1. General description The 74AHC244-Q100; 74AHCT244-Q100 is a high-speed Si-gate CMOS device. The 74AHC244-Q100; 74AHCT244-Q100 has octal non-inverting buffer/line drivers with 3-state outputs. The 3-state outputs are controlled by the output enable inputs (nOE). A HIGH on nOE causes the outputs to assume a high-impedance OFF-state. ...

Page 2

... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name 40 C to +125 C 74AHC244D-Q100 74AHCT244D-Q100 40 C to +125 C 74AHC244PW-Q100 74AHCT244PW-Q100 40 C to +125 C 74AHC244BQ-Q100 74AHCT244BQ-Q100 4. Functional diagram Fig 1. Functional diagram 74AHC_AHCT244_Q100 Product data sheet 74AHC244-Q100; 74AHCT244-Q100 ...

Page 3

... NXP Semiconductors 2 18 1A0 1Y0 2A0 4 16 1A1 2A1 1Y1 6 14 1A2 1Y2 2A2 8 12 1A3 1Y3 2A3 1 1OE 2OE Fig 2. Logic symbol 5. Pinning information 5.1 Pinning 74AHC244-Q100 74AHCT244-Q100 1OE 1 2 1A0 2Y0 3 1A1 4 2Y1 5 1A2 6 7 2Y2 1A3 8 2Y3 9 GND 10 Fig 4. ...

Page 4

... NXP Semiconductors 5.2 Pin description Table 2. Pin description Symbol Pin Description 1OE, 2OE 1, 19 output enable input (active LOW) 1A[0: data input 2A[0:3] 17, 15, 13, 11 data input 1Y[0:3] 18, 16, 14, 12 data output 2Y[0: data output GND 10 ground ( supply voltage CC 6. Functional description [1] Table 3 ...

Page 5

... NXP Semiconductors 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC V input voltage I V output voltage O T ambient temperature amb t/V input transition rise and fall rate 9. Static characteristics Table 6. Static characteristics Voltages are referenced to GND (ground = 0 V) ...

Page 6

... NXP Semiconductors Table 6. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions C input I capacitance C output O capacitance 74AHCT244-Q100 V HIGH-level input voltage V LOW-level input voltage V HIGH-level output voltage = 50  8 ...

Page 7

... NXP Semiconductors 10. Dynamic characteristics Table 7. Dynamic characteristics GND = 0 V. For test circuit see Figure Symbol Parameter Conditions 74AHC244-Q100 t propagation nAn to nYn; see pd delay enable time nOE to nYn; see ...

Page 8

... NXP Semiconductors Table 7. Dynamic characteristics GND = 0 V. For test circuit see Figure Symbol Parameter Conditions 74AHCT244-Q100 t propagation nAn to nYn; see pd delay enable time nOE to nYn; see 4 5 disable time nOE to nYn; see ...

Page 9

... NXP Semiconductors nOE input nYn output LOW-to-OFF OFF-to-LOW nYn output HIGH-to-OFF OFF-to-HIGH Measurement points are given in V and V are typical voltage output levels that occur with the output load Fig 7. enable and disable times Table 8. Measurement points ...

Page 10

... NXP Semiconductors negative Test data is given in Table Definitions test circuit Termination resistance should be equal to output impedance Load capacitance including jig and probe capacitance Load resistor Test selection switch Fig 8. Test circuit for measuring switching times Table 9. Test data ...

Page 11

... NXP Semiconductors 12. Package outline SO20: plastic small outline package; 20 leads; body width 7 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.3 2.45 mm 2.65 0.25 0.1 2.25 0.012 0.096 inches 0.1 0.01 0.004 0.089 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

Page 12

... NXP Semiconductors TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4 pin 1 index 1 DIMENSIONS (mm are the original dimensions) A UNIT max. 0.15 0.95 mm 1.1 0.25 0.05 0.80 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. ...

Page 13

... NXP Semiconductors DHVQFN20: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 20 terminals; body 2.5 x 4.5 x 0.85 mm terminal 1 index area terminal 1 index area DIMENSIONS (mm are the original dimensions) (1) A UNIT max. 0.05 0. 0.2 0.00 0.18 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. ...

Page 14

... NXP Semiconductors 13. Abbreviations Table 10. Abbreviations Acronym Description CDM Charge Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic MIL Military 14. Revision history Table 11. Revision history Document ID Release date 74AHC_AHCT244_Q100 v ...

Page 15

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 16

... NXP Semiconductors No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations ...

Page 17

... NXP Semiconductors 17. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 5 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 5.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 6 Functional description . . . . . . . . . . . . . . . . . . . 4 7 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 11 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 13 Abbreviations ...

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