MAX9967ADCCQ+D Maxim Integrated, MAX9967ADCCQ+D Datasheet - Page 27

• Manufacturer Part Number: MAX9967ADCCQ+D
• Description: Buffers & Line Drivers Dual 500Mbps ATE Driver/Comparator
• Manufacturer: Maxim Integrated

Specifications of MAX9967ADCCQ+D

• Rohs: yes

The MAX9967 supplies a temperature output signal,
TEMP, that asserts a nominal output voltage of 3.43V at
a die temperature of +70°C (343K). The output voltage
increases proportionately with temperature.
Under normal circumstances, the MAX9967 requires
heat removal through the exposed pad by use of an
external heat sink. The exposed pad is electrically at
V
isolated.
Power dissipation is highly dependent upon the appli-
cation. The Electrical Characteristics Table indicates
power dissipation under the condition that the source
and sink currents are programmed to 0mA. Maximum
dissipation occurs when the source and sink currents
are both at 35mA, the V
voltage range (-1.5V or +6.5V), and the diode bridge is
fully commutated. Under these conditions, the addition-
al power dissipated (per channel) is:
If the DUT is sourcing current, ∆P
I
If the DUT is sinking current, ∆P
I
The DUT sources the programmed (low) current when
V
DUT through the outside of the diode bridge and the
source (low) current source to V
sink current flows from V
rent source, the inside of the diode bridge, and the
commutation buffer to V
The DUT sinks the programmed (high) current when
V
SOURCE
SINK
EE
DUT
DUT
potential, and must be either connected to V
_ < V
_ > V
+ (V
+ (V
CC
COM
COM
- V
CC
_. The path of the current is from V
EE
_. The path of the current is from the
- V
) x I
______________________________________________________________________________________
EE
) x I
SOURCE.
EE
CC
DUT_
SINK.
.
Temperature Monitor
through the sink (high) cur-
Driver/Comparator with 35mA Load
is at an extreme of the
EE
D
D
. The programmed
= (V
= (V
Heat Removal
Dual, Low-Power, 500Mbps ATE
CC
DUT
- V
_ - V
DUT
EE
EE
_) x
) x
CC
or
through the sink (high) current source and the outside
of the diode bridge to the DUT. The programmed
source current flows from V
buffer, the inside of the diode bridge, and the source
(low) current source to V
Theta J-C of the exposed-pad package is very low,
approximately 3
highly dependent upon the heat-removal techniques
used in the application.
Maximum total power dissipation occurs under the fol-
lowing conditions:
• V
• V
• I
• Load enabled
• V
• V
Under these extreme conditions, the total power dissi-
pation is approximately 6W. If the die temperature can-
not be maintained at an acceptable level under these
conditions, use software clamping to limit the load out-
put currents to lower values and/or reduce the supply
voltages.
TRANSISTOR COUNT: 5656
PROCESS: Bipolar
SOURCE
CC
EE
DUT
COM
= -6.5V
= +10.5V
_ = +6.5V
_ < +5.5V
= I
SINK
°
C/W to 4
= 35mA for both channels
EE
°
C/W. Die temperature is thus
.
CC
Chip Information
through the commutation
27