MC100EPT21DTR2G ON Semiconductor, MC100EPT21DTR2G Datasheet - Page 3
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MC100EPT21DTR2G
Manufacturer Part Number
MC100EPT21DTR2G
Description
IC XLATOR LVPECL-LVTTL 8-TSSOP
Manufacturer
ON Semiconductor
Series
100EPTr
Datasheet
1.MC100EPT21MNR4G.pdf
(8 pages)
Specifications of MC100EPT21DTR2G
Logic Function
Translator
Number Of Bits
1
Input Type
CML, LVDS, LVPECL
Output Type
LVTTL, LVCMOS
Number Of Channels
1
Number Of Outputs/channel
1
Differential - Input:output
Yes/No
Propagation Delay (max)
1.8ns
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-TSSOP
Supply Voltage
3 V ~ 3.6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data Rate
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC100EPT21DTR2G
Manufacturer:
ON Semiconductor
Quantity:
1 250
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
3. Input parameters vary 1:1 with V
4. V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
5. Measured with a 750 mV 50% duty−cycle clock source. R
6. Skews are measured between outputs under identical transitions. Duty cycle skew is measured between differential outputs using the
Table 4. PECL INPUT DC CHARACTERISTICS
Table 5. LVTTL/LVCMOS OUTPUT DC CHARACTERISTICS
Table 6. AC CHARACTERISTICS
Symbol
V
V
V
V
I
I
V
V
I
I
I
f
t
t
t
t
t
V
t
t
Symbol
IH
IL
Symbol
CCH
CCL
OS
max
PLH
PHL
SKEW
SKPP
JITTER
r
f
IH
IL
BB
IHCMR
OH
OL
PP
differential input signal.
deviations of the sum Tpw− and Tpw+.
IHCMR
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with GND, V
Maximum Frequency
(Figure 2)
Propagation Delay to
Output Differential
Duty Cycle Skew (Note 6)
Part−to−Part Skew (Note 6)
Random Clock Jitter (RMS)
Input Voltage Swing
(Differential Configuration)
Output Rise/Fall Times
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Output Voltage Reference
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 4)
Input HIGH Current
Input LOW Current
Output HIGH Voltage
Output LOW Voltage
Power Supply Current
Power Supply Current
Output Short Circuit Current
(0.8V − 2.0V)
Characteristic
Characteristic
Characteristic
CC
.
IHCMR
V
CC
= 3.0 V to 3.6 V, GND = 0.0 V (Note 5)
Q, Q
max varies 1:1 with V
1200
Min
275
800
150
250
45
V
2075
1355
1775
−150
Min
1.2
CC
http://onsemi.com
I
I
Outputs set to HIGH
Outputs set to LOW
OH
OL
L
= 3.3 V, GND = 0.0 V (Note 3)
= 500 W to GND and C
−40°C
1400
1400
= 24 mA
= −3.0 mA
Typ
350
800
600
3.5
−40°C
50
1875
Typ
3
CC
Condition
V
. The V
2050
1800
1200
Max
500
900
CC
55
2420
1675
1975
Max
5
150
3.3
= 3.3 V, GND = 0.0 V, T
IHCMR
1200
Min
275
800
150
250
2075
1355
1775
−150
45
Min
1.2
L
range is referenced to the most positive side of the
= 20 pF to GND. Refer to FIgure 3.
25°C
1400
1400
Typ
350
800
600
25°C
1875
3.5
Typ
50
−130
Min
2.4
5
8
2250
1800
1200
2420
1675
1975
Max
Max
500
900
150
3.3
55
5
A
= −40°C to 85°C
2075
1355
1775
−150
1100
Min
Min
275
900
150
250
1.2
45
Typ
17
21
85°C
1875
85°C
1600
1300
Typ
Typ
350
800
600
3.5
50
Max
−80
0.5
25
30
2420
1675
1975
Max
150
2950
1900
1200
3.3
Max
500
900
55
5
Unit
Unit
Unit
MHz
mV
mV
mV
mA
mA
mA
mA
mA
mV
V
V
V
ps
ps
ps
ps
%