M24512-DRMN6TP STMicroelectronics, M24512-DRMN6TP Datasheet - Page 26

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M24512-DRMN6TP

Manufacturer Part Number
M24512-DRMN6TP
Description
EEPROM 512 Kbit serial I2C EEPROM 3 Chip
Manufacturer
STMicroelectronics
Datasheet

Specifications of M24512-DRMN6TP

Product Category
EEPROM
Rohs
yes
DC and AC parameters
26/40
Table 13.
1. For devices identified by process letter AB: I
2. Characterized value, not tested in production.
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
I
V
I
CC0
CC1
V
completion of the internal write cycle t
I
CC
CC
LO
LI
OL
IH
IL
Input leakage current
(SCL, SDA, E2, E1,
E0)
Output leakage
current
Supply current (Read)
Supply current (Read)
Supply current (Write) During t
Standby supply
current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24512-W, device grade 6)
Parameter
Doc ID 16459 Rev 26
V
device in Standby mode
SDA in Hi-Z, external voltage applied
on SDA: V
V
(rise/fall time < 50 ns)
V
(rise/fall time < 50 ns)
2.5 V < V
(rise/fall time < 50 ns)
2.5 V < V
(rise/fall time < 50 ns)
Device not selected
V
Device not selected, V
V
I
I
OL
OL
IN
CC
CC
CC
CC
Test conditions (see
W
= 2.1 mA, V
= 3 mA, V
= V
, V
= 2.5 V, f
= 5.5 V, f
= 5.5 V
(t
W
CC
SS
W
is triggered by the correct decoding of a Write instruction).
CC
CC
CC
, 2.5 V < V
= 2.5 V
or V
SS
(max) = 1 mA.
< 5.5 V, f
< 5.5 V, f
or V
c
c
CC
M24512-W M24512-R M24512-DR M24512-DF
CC
= 400 kHz
= 400 kHz
CC
Table
= 5.5 V
CC
= 2.5 V or
(3)
CC
c
, V
9)
c
IN
= 400 kHz
= 1 MHz
< 5.5 V
IN
Table 6
= V
= V
SS
SS
or V
and
or
CC
,
0.7 V
0.7 V
–0.45
Min.
-
-
-
-
-
-
CC
CC
V
0.3 V
CC
Max.
2
5
± 2
± 2
2.5
6.5
0.4
2
2
2
3
(1)
(2)
+0.6
CC
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V

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