MX29LV320ETTI-70G Macronix, MX29LV320ETTI-70G Datasheet - Page 10

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MX29LV320ETTI-70G

Manufacturer Part Number
MX29LV320ETTI-70G
Description
MX29LV Series 3 V 32 Mb (4M x 8/2M x 16) 70 ns Parallel Flash - TSOP-48
Manufacturer
Macronix
Datasheet

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MX29LV320E T/B
BLOCK DIAGRAM DESCRIPTION
The block diagram on Page 9 illustrates a simplified architecture of MX29LV320E T/B. Each block in the block
diagram represents one or more circuit modules in the real chip used to access, erase, program, and read the
memory array..
The "CONTROL INPUT LOGIC" block receives input pins CE#, OE#, WE#, RESET#, BYTE#, and WP#/ACC.
It creates internal timing control signals according to the input pins and outputs to the "ADDRESS LATCH AND
BUFFER" to latch the external address pins A0-AM(A20). The internal addresses are output from this block to
the main array and decoders composed of "X-DECODER", "Y-DECODER", "Y-PASS GATE", and "FLASH AR-
RAY". The X-DECODER decodes the word-lines of the flash array, while the Y-DECODER decodes the bit-lines
of the flash array. The bit lines are electrically connected to the "SENSE AMPLIFIER" and "PGM DATA HV" se-
lectively through the y-pass gates. Sense amplifiers are used to read out the contents of the flash memory, while
the "PGM DATA HV" block is used to selectively deliver high power to bit-lines during programming. The "I/O
BUFFER" controls the input and output on the Q0-Q15/A-1 pads. During read operation, the I/O buffer receives
data from sense amplifiers and drives the output pads accordingly. In the last cycle of program command, the I/O
buffer transmits the data on Q0-Q15/A-1 to "PROGRAM DATA LATCH", which controls the high power drivers in
"PGM DATA HV" to selectively program the bits in a word or byte according to the user input pattern.
The "PROGRAM/ERASE HIGH VOLTAGE" block comprises the circuits to generate and deliver the necessary
high voltage to the X-DECODER, FLASH ARRAY, and "PGM DATA HV" block. The logic control module com-
prises of the "WRITE STATE MACHINE (WSM)", "STATE REGISTER", "COMMAND DATA DECODER", and
"COMMAND DATA LATCH". When the user issues a command by toggling WE#, the command on Q0-Q15/A-1
is latched in the command data latch and is decoded by the command data decoder. The state register receives
the command and records the current state of the device. The WSM implements the internal algorithms for pro-
gram or erase according to the current command state by controlling each block in the block diagram.
P/N:PM1575
REV. 1.2, MAY 23, 2011
10

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