LM4040DIZ-5.0/T8 National Semiconductor, LM4040DIZ-5.0/T8 Datasheet - Page 6

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LM4040DIZ-5.0/T8

Manufacturer Part Number
LM4040DIZ-5.0/T8
Description
Manufacturer
National Semiconductor
Datasheet
www.national.com
V
I
ΔV
ΔV
Z
e
ΔV
V
ΔV
V
RMIN
Symbol
Symbol
R
N
R
HYST
HYST
LM4040-2.0
Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for T
Breakdown Voltage tolerances of ±0.5%, ±1.0% and ±2.0%, respectively.
R
R
R
R
/ΔT
/ΔI
R
Reverse Breakdown Voltage
Long Term Stability
Thermal Hysteresis
(Note
Reverse Breakdown
Voltage
Reverse Breakdown
Voltage Tolerance
(Note
Minimum Operating
Current
Average Reverse
Breakdown Voltage
Temperature
Coefficient
(Note
Reverse Breakdown
Voltage Change with
Operating Current
Change
(Note
Reverse Dynamic
Impedance
Wideband Noise
Reverse Breakdown
Voltage Long Term
Stability
Thermal Hysteresis
(Note
Parameter
8)
6)
6)
)
8)
Parameter
A
= T
I
I
I
I
I
I
1 mA
I
I
I
10 Hz
t = 1000 hrs
T = 25°C ±0.1°C
I
ΔT = −40°C to +125°C
R
R
R
R
R
RMIN
R
AC
R
R
J
= 100 μA
= 100 μA
= 10 mA
= 1 mA
= 100 μA
= 1 mA, f = 120 Hz
= 100 μA
= 100 μA
= T
= 0.1 I
Conditions
MIN
I
t = 1000 hrs
T = 25°C ±0.1°C
I
ΔT = −40°C to +125°C
I
R
R
R
f
to T
R
= 100 μA
1 mA
10 kHz
15 mA
MAX
Conditions
; all other limits T
(Note
Typical
2.048
0.08
±20
±15
±15
120
0.3
2.5
0.3
45
35
4)
6
A
= T
(Note
Typical
LM4040CIM3
LM4040CIM7
LM4040CIZ
0.08
120
J
(Note
(Limit)
= 25°C. The grades C, D and E designate initial Reverse
±100
±10
±23
0.8
1.0
6.0
8.0
0.9
60
65
4)
5)
LM4040AIM3
LM4040AIZ
(Note
(Limit)
LM4040DIM3
LM4040DIM7
LM4040DIZ
(Note
(Limit)
5)
±150
10.0
±20
±40
1.0
1.2
8.0
1.1
65
70
5)
LM4040BIM3
LM4040BIM7
LM4040BIZ
(Note
(Limit)
LM4040EIM7
LM4040EIZ
(Note
(Limit)
±150
10.0
±41
±60
5)
1.0
1.2
8.0
1.1
65
70
5)
ppm/°C (max)
(Limit)
mV (max)
mV (max)
mV (max)
mV (max)
mV (max)
mV (max)
Units
μA (max)
μA (max)
ppm
ppm/°C
ppm/°C
Ω(max)
(Limit)
%
Units
μV
ppm
mV
mV
μA
%
V
Ω
rms

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