FLU17ZMTE1 Sumitomo Electric, FLU17ZMTE1 Datasheet
FLU17ZMTE1
Related parts for FLU17ZMTE1
FLU17ZMTE1 Summary of contents
Page 1
FEATURES ・High Output Power: P1dB=32.5dBm(typ.) ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application 4.0GHz frequency range. This is a new ...
Page 2
POWER DERATING CURVE Case Temperatur[deg.C] SMALL SIGNAL R.L. vs FREQUENCY Wide Band Tuning (1.8GHz to2.2GHz -10 -15 -20 -25 -30 ...
Page 3
S-PARAMETER +50j +25j +10j 3.0 3.0 0 2.0 2.0 1.0GHz 1.0GHz -10j -25j -50j Freq S11 [GHz] MAG 0.5 0.89 1 0.87 1.5 0.87 2 0.87 2.5 0.85 3 0.84 3.5 0.85 4 0.87 4.5 0.89 ...
Page 4
OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER Pin-Pout @f=1.8GHz Input Pow e r [dBm ] Pout Ids[m A] Pin-Pout @f=2.2GHz ...
Page 5
IMD vs OUTPUT POWER(2-tone) 0 -10 -20 -30 -40 -50 -60 -70 - 2-tone total Pout [dBm ] @ df=+ 1.8GHz IM 5@ 1.8GHz IM 5@ 2.0GHz IM 3L dBc W-CDMA SINGLE CARRIER ACLR ...
Page 6
Recommended Bias Circuit and Internal Block Diagram <Board information> r=3.5 , t=0.8 * Board was tuned for wide band performance that is presented in page 4 and 5. Edition 1.1 Apr. 2012 FLU17ZME1 L-Band Medium & ...
Page 7
Package Outline Edition 1.1 Apr. 2012 FLU17ZME1 L-Band Medium & High Power GaAs FET 7 ...
Page 8
For further information please contact: http://global-sei.com/Electro-optic/about/office.html This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter ...