AT45DB321D-SU-2.5 Atmel, AT45DB321D-SU-2.5 Datasheet

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AT45DB321D-SU-2.5

Manufacturer Part Number
AT45DB321D-SU-2.5
Description
memory size:32mbit; supply voltage range:2.5v to 3.6v; memory case style:soic; no. of...
Manufacturer
Atmel
Datasheet

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Part Number:
AT45DB321D-SU-2.5
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ON
Quantity:
31 000
Features
Single 2.5V - 3.6V or 2.7V - 3.6V supply
Atmel
User configurable page size
Page program operation
Flexible erase options
Two SRAM data buffers (512/528 bytes)
Continuous read capability through entire array
Low power dissipation
Hardware and software data protection features
Sector lockdown for secure code and data storage
Security: 128-byte security register
JEDEC standard manufacturer and device ID read
100,000 program/erase cycles per page, minimum
Data retention: 20 years
Industrial temperature range
Green (Pb/halide-free/RoHS compliant) packaging options
SPI compatible modes 0 and 3
512 bytes per page
528 bytes per page
Page size can be factory preconfigured for 512 bytes
Intelligent programming operation
8,192 pages (512/528 bytes/page) main memory
Page erase (512 bytes)
Block erase (4KB)
Sector erase (64KB)
Chip erase (32Mb)
Allows receiving data while reprogramming the flash array
Ideal for code shadowing applications
7mA active read current ,typical
25µA standby current, typical
15μA deep power down, typical
Individual sector
Individual sector
64-byte user programmable space
Unique 64-byte device identifier
®
RapidS
serial interface: 66MHz maximum clock frequency
Atmel AT45DB321D
32Mb, 2.5V or 2.7V
Atmel DataFlash
DATASHEET
3597Q–DFLASH–6/11

Related parts for AT45DB321D-SU-2.5

AT45DB321D-SU-2.5 Summary of contents

Page 1

... Unique 64-byte device identifier ● JEDEC standard manufacturer and device ID read ● 100,000 program/erase cycles per page, minimum ● Data retention: 20 years ● Industrial temperature range ● Green (Pb/halide-free/RoHS compliant) packaging options Atmel AT45DB321D 32Mb, 2.5V or 2.7V Atmel DataFlash DATASHEET 3597Q–DFLASH–6/11 ...

Page 2

... Description The Atmel AT45DB321D is a 2.5V or 2.7V, serial interface, sequential access flash memory ideally suited for a wide variety of digital voice-, image-, program code-, and data-storage applications. The AT45DB321D supports the Atmel RapidS serial interface for applications requiring very high speed operations. The RapidS serial interface is SPI compatible for frequencies up to 66MHz ...

Page 3

... CC voltages may produce spurious results and should not be Asserted State Type Low Input – Input – Input – Output Low Input Low Input – Output – Power – Ground 3 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 4

... RDY/BUSY 2. Memory Array To provide optimal flexibility, the AT45DB321D memory array is divided into three levels of granularity comprising sectors, blocks, and pages. The “Memory Architecture Diagram” pages per sector and block. All program operations to the DataFlash device occur on a page-by-page basis. The erase operations can be performed at the chip, sector, block, or page level ...

Page 5

... A valid instruction starts with the falling edge of CS, diagrams in this datasheet for details on the clock cycle sequences specification. The continuous array read bypasses CAR1 . To perform a continuous read array with the page size set to 528 bytes, CAR1 Section 22., Detailed Bit-level Read 5 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 6

... A low-to-high transition on the CS pin will terminate the read operation and tri-state the output pin (SO perform a continuous read array with the page size set to 528 bytes, the CS must CAR2 specification. The main memory page read SCK Atmel AT45DB321D 3597Q–DFLASH–6/11 . CAR2 6 ...

Page 7

... The erase operation is internally self-timed, and should take place in a maximum time of t status register and the RDY/BUSY pin will indicate that the part is busy. . During this EP . During this time, the status P . During this time, the PE 7 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 8

... ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 1020 1021 1022 1023 . During this time, SE Atmel AT45DB321D 3597Q–DFLASH–6/11 8 ...

Page 9

... ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● During CE Byte 3 Byte 4 80H 9AH Atmel AT45DB321D 3597Q–DFLASH–6/11 9 ...

Page 10

... Enable Sector Protection Figure 6-1. Enable Sector Protection CS Opcode SI Byte 1 Each transition represents 8 bits . During this time, the status register and the RDY/BUSY pin will EP Byte 1 3DH Opcode Opcode Opcode Byte 2 Byte 3 Byte 4 Byte 2 Byte 3 Byte 4 2AH 7FH A9H Atmel AT45DB321D 3597Q–DFLASH–6/11 10 ...

Page 11

... Opcode Opcode Opcode Byte 2 Byte 3 Byte 4 time. However, when the WP pin is deasserted, sector protection would no WPE time) as long as the enable sector protection command was not issued WPD 2 Byte 2 Byte 3 Byte 4 2AH 7FH 9AH , then the CC 3 Atmel AT45DB321D 3597Q–DFLASH–6/11 11 ...

Page 12

... Enabled Read only Enabled Read/write Disabled Read/write Enabled Read/write Table 7-3 illustrates the format of the sector FFH 00H 0b Bit 5, 4 Bit 3, 2 Bit Atmel AT45DB321D 3597Q–DFLASH–6/11 Data Value 0xH CxH 3xH FxH 12 ...

Page 13

... Section th byte will be stored at byte location 0 of the sector protection register. Byte 1 3DH Byte 2 Byte 3 2AH 7FH 7.1, the sector protection register contains 64 bytes of , during which the status register P Byte 2 Byte 3 2AH 7FH Atmel AT45DB321D 3597Q–DFLASH–6/11 Byte 4 CFH Byte 4 FCH 13 ...

Page 14

... Opcode Opcode Opcode Data byte byte 2 byte 3 byte 4 n Byte 1 32H Data byte n Data byte Data byte Byte 2 Byte 3 Byte 4 xxH xxH xxH Data byte Data byte Atmel AT45DB321D 3597Q–DFLASH–6/11 14 ...

Page 15

... Bit Byte 3 Byte 4 7FH 30H Address Address bytes bytes FFH 00H 0b Bit 5, 4 Bit 3, 2 Bit Atmel AT45DB321D 3597Q–DFLASH–6/11 Data Value 00H C0H 30H F0H 15 ...

Page 16

... Data byte n Security Register Byte Number 1 · · · One-time user programmable Byte 2 Byte 3 Byte 4 xxH xxH xxH Data byte Data byte · · · 126 Atmel factory programmed Atmel AT45DB321D 3597Q–DFLASH–6/11 127 16 ...

Page 17

... Opcode Opcode Opcode Data byte byte 2 byte 3 byte Data byte n , during which the status register will indicate P Data byte Data byte Data byte Data byte Atmel AT45DB321D 3597Q–DFLASH–6/11 17 ...

Page 18

... Atmel for availability of devices that are specified to exceed the 20,000 cycle cumulative limit. XFR Figure 23-2, page 42 is recommended. Each page within a sector must be ), the status register can be read or the ), the status register and the COMP Figure Atmel AT45DB321D 3597Q–DFLASH–6/11 23-1, 18 ...

Page 19

... The device density is indicated using bits and 2 of the status register. For the AT45DB321D, the four bits are 1101. The decimal value of these four binary bits does not equate to the device density — the four bits represent a combinational code relating to differing densities of DataFlash devices ...

Page 20

... Resume from deep power-down Figure 10-2. Resume from Deep Power-Down CS SI Opcode Each transition represents 8 bits . Once the device has entered the deep power-down mode, all EDPD Opcode B9H time before the device can receive any commands. RDPD Opcode ABH Atmel AT45DB321D 20 3597Q–DFLASH–6/11 ...

Page 21

... The fourth byte output will be the extended device information string length, which will be 00H to indicate that no extended Byte 1 3DH Opcode Opcode Opcode byte 2 byte 3 byte 4 Section 24. “Ordering Information” during which time the status P Byte 2 Byte 3 Byte 4 2AH 80H A6H Atmel AT45DB321D 3597Q–DFLASH–6/11 21 ...

Page 22

... Manufacturer ID 1FH = Atmel Family code 001 = DataFlash Density code 00111 = 32Mb MLC code 000 = 1-bit/cell technology Product version 00001 = Second version Byte count 00H = 0 bytes of Information Data Extended device information Byte Atmel AT45DB321D 3597Q–DFLASH–6/11 22 ...

Page 23

... However, during the internally self-timed portion of group B commands, any command in group C can be executed. The group B commands using buffer 1 should use group C commands using buffer 2, and vice versa. Finally, during the internally self-timed portion of a group D command, only the status register read command should be executed. 23 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 24

... C7H, 94H, 80H, 9AH 82H 85H Opcode 3DH + 2AH + 7FH + A9H 3DH + 2AH + 7FH + 9AH 3DH + 2AH + 7FH + CFH 3DH + 2AH + 7FH + FCH 32H 3DH + 2AH + 7FH + 30H 35H 9BH + 00H + 00H + 00H 77H 24 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 25

... Main memory page read Continuous array read Status register read Note: 1. These legacy commands are not recommended for new designs. Opcode 53H 55H 60H 61H 58H 59H B9H ABH D7H 9FH Opcode 54H 56H 52H 68H 57H 25 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 26

... N/A N/A N N/A Atmel AT45DB321D 3597Q–DFLASH–6/11 Bytes N/A 1 N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A 4 N/A ...

Page 27

... N/A N/A N N/A Atmel AT45DB321D 3597Q–DFLASH–6/11 Bytes N/A 1 N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A ...

Page 28

... CC VCSL rises above the power-on reset threshold value (V CC Min 70 1.5 . During VCSL rises above the power-on reset CC ) before the device can POR Typ Max Unit μ 2 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 29

... CC1 2. All inputs (SI, SCK, CS#, WP#, and RESET#) are guaranteed by design tolerant. *NOTICE: Stresses beyond those listed under “Absolute but including NC pins) + 0.6V CC Atmel AT45DB321D (2.5V Version) -40°C to 85°C 2.5V to 3.6V Condition CS, RESET all inputs at CMOS levels ...

Page 30

... TBD TBD TBD Atmel AT45DB321D Max Unit 66 MHz 66 MHz 33 MHz ns ns V/ns V/ 100 μs 1 μs 3 μs 35 μs 300 µs 300 µs ...

Page 31

... Level page 31. Waveform 1 shows the SCK signal being low when CS makes a high-to CSH Valid out Timing waveforms 1 and 2 conform to WL period. These timing waveforms are valid DIS High impedance Atmel AT45DB321D 3597Q–DFLASH–6/11 31 ...

Page 32

... SU Valid CSH 66MHz) MAX CSH Valid out 66MHz) MAX CSH t HO Valid out DIS High impedance DIS High impedance DIS High impedance 32 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 33

... SO (OUTPUT) SI (INPUT) Note: The CS signal should be in the high state before the RESET signal is deasserted LSB BYTE-MOSI F High impedance MSB BYTE-SO t REC t CSS t RST High impedance Atmel AT45DB321D 3597Q–DFLASH–6/11 1 LSB 33 ...

Page 34

... Page address Byte/Buffer address (PA12 - PA0) (BA9 - BA0/BFA9 - BFA0) Flash Memory Array Buffer 2 (512-/528-bytes) I/O Interface SI LSB LSB Buffer 2 to Main Memory Page Program Buffer 2 WRITE Atmel AT45DB321D 3597Q–DFLASH–6/11 34 ...

Page 35

... A21- don't care bits CMD PA12-6 PA5-0, XX Flash Memory Array Buffer 2 (512-/528-bytes) Main Memory Page Read I/O Interface SO Completes writing into selected buffer n n+1 Last byte XXXX 1st byte read n+1 = 2nd byte read Main Memory Page to Buffer 2 Buffer 2 Read Atmel AT45DB321D 3597Q–DFLASH–6/11 35 ...

Page 36

... Starts reading page data into buffer Binary Page Size A21- Don't care bits PA12-6 PA5-0, XX Binary Page Size 15 Don't care + Bfa8-bfa0 X BFA7 X..X, BFA9-8 No dummy byte (opcodes D1H and D3H) 1 dummy byte (opcodes D4H and D6H n+1 XXXX XXXX n n+1 36 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 37

... Don't care Data byte MSB Data byte MSB Atmel AT45DB321D 3597Q–DFLASH–6/ MSB Bit 0 of Page N MSB 37 ...

Page 38

... X X Data byte MSB MSB Data byte MSB MSB MSB Atmel AT45DB321D 3597Q–DFLASH–6/11 38 ...

Page 39

... Don't care MSB Data byte MSB MSB MSB MSB Atmel AT45DB321D 3597Q–DFLASH–6/11 39 ...

Page 40

... SI and SO represents one byte (8 bits Status register data Status register data MSB MSB Device Id byte 1 Device Id byte 2 00H MSB 38 Atmel AT45DB321D 3597Q–DFLASH–6/11 40 ...

Page 41

... The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page within the entire array. START Provide Address and Data Buffer Write (84h, 87h) Buffer to Main Memory Page Program (83h, 86h) END 41 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 42

... If planning to modify multiple to Buffer Transfer bytes currently stored within (53h, 55h) a page of the Flash array Buffer Write (84h, 87h) Buffer to Main Memory Page Program (83h, 86h) (2) Auto Page Rewrite (58h, 59h) Increment Page (2) Address Pointer END 42 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 43

... AT45DB321D-SU (3) AT45DB321D-SU-SL954 (4) AT45DB321D-SU-SL955 AT45DB321D-TU AT45DB321D-CU AT45DB321D-MU-2.5 AT45DB321D-SU-2.5 Notes: 1. The shipping carrier option is not marked on the devices. 2. Standard parts are shipped with the page size set to 528 bytes. The user is able to configure these parts to a 512-byte page size, if desired. 3. Parts ordered with suffix SL954 are shipped in bulk, with the page size set to 512 bytes. ...

Page 44

... Lead Package (VDFN) SIDE VIEW A3 A1 0.08 C COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE A – 0.85 1.00 A1 – – 0.05 A2 0.65 TYP A3 0.20 TYP b 0.35 0.40 0.48 D 5.90 6.00 6.10 D1 5.70 5.75 5.80 D2 3.20 3.40 3.60 E 4.90 5.00 5.10 E1 4.70 4.75 4.80 E2 3.80 4.00 4.20 e 1.27 L 0.50 0.60 0.75 0 – – 0.25 – – GPC DRAWING NO. YBR 8M1-A Atmel AT45DB321D 3597Q–DFLASH–6/11 8/28/08 REV ...

Page 45

... Body, Very Thin Dual Flat Package No Lead (MLF) SIDE VIEW COMMON DIMENSIONS (Unit of Measure = mm) MIN MAX NOM – – 1.00 A1 – – 0.05 b 0.35 0.40 0.48 D 7.90 8.00 8.10 D1 6.30 6.40 6.50 E 5.90 6.00 6.10 E1 4.70 4.80 4.90 e 1.27 L 0.45 0.50 0.55 K 0.30 REF 5/25/ WING 8MW B Atmel AT45DB321D 3597Q–DFLASH–6/11 45 ...

Page 46

... TITLE 8S2, 8-lead, 0.208” Body, Plastic Small Outline Package (EIAJ End View q q COMMON DIMENSIONS (Unit of Measure = mm) MIN NOM MAX NOTE 2.16 1.70 0.05 0.25 0.35 0.48 4 0.15 0.35 4 5.35 5.13 5.18 5.40 2 7.70 8.26 0.51 0.85 8˚ 0˚ 1.27 BSC 3 4/15/08 GPC DRAWING NO. REV. STN 8S2 F 46 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 47

... TITLE 28T, 28-lead (8 x 13.4mm) Plastic Thin Small Outline Package, Type I (TSOP GAGE PLANE COMMON DIMENSIONS (Unit of Measure = mm) MIN NOM MAX NOTE – – 1.20 0.05 – 0.15 0.90 1.00 1.05 13.20 13.40 13.60 11.70 11.80 11.90 Note 2 7.90 8.00 8.10 Note 2 0.50 0.60 0.70 0.25 BASIC 0.17 0.22 0.27 0.10 – 0.21 0.55 BASIC 12/06/02 DRAWING NO. REV. 28T C 47 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 48

... TITLE 24C3, 24-ball ( Array), 1.0 mm Pitch 1.20 mm, Chip-scale Ball Grid Array Package (CBGA) COMMON DIMENSIONS (Unit of Measure = mm) MIN NOM MAX NOTE 5.90 6.00 6.10 4.0 TYP 7.90 8.00 8.10 4.0 TYP – – 1.20 0.25 – – 1.00 BSC 0.40 TYP 9/10/04 DRAWING NO. REV. 24C3 A 48 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 49

... Removed “not recommended for new designs” note from ordering information for 8MW package 3597F 08/2006 Added errata regarding Chip Erase Added AT45DB321D-SU to ordering information and corresponding 8S2 package 3597E 07/2006 Corrected typographical errors 3597D 04/2006 Added 8 x 6mm MLF (VDFN) package ...

Page 50

... Use block erase (opcode 50H alternative. The block erase function is not affected by the chip erase issue. 27.1.3 Resolution The chip erase feature may be fixed with a new revision of the device. Please contact Atmel for the estimated availability of devices with the fix. 50 Atmel AT45DB321D 3597Q–DFLASH–6/11 ...

Page 51

... Other terms and product names may be trademarks of others. Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN THE ATMEL TERMS AND CONDITIONS OF SALES LOCATED ON THE ATMEL WEBSITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT ...

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