CM100E3U-12E Mitsubishi, CM100E3U-12E Datasheet - Page 2

• Manufacturer Part Number: CM100E3U-12E
• Description: cm100e3u-12e...
• Manufacturer: Mitsubishi

Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Emitter-Collector Voltage
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
c
c
= 25°C)
= 25°C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
c
= 25°C, T
j
= 25 °C unless otherwise specified
j
j
V
Symbol
Symbol
= 25 °C unless otherwise specified
V
150°C)
CE(sat)
t
t
I
C
I
C
GE(th)
V
V
C
d(on)
d(off)
CES
GES
Q
Q
Q
j
t
t
FM
oes
EC
res
t
t
ies
rr
rr
G
r
f
rr
rr
= 25 °C unless otherwise specified
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V
I
I
C
CC
C
I
I
= 100A, V
I
I
F
F
= 100A, V
E
E
Load Switching Operation
= 300V, I
V
= 100A, Clamp Diode Part
= 100A, Clamp Diode Part
V
V
= 100A, di
= 100A, di
I
V
C
I
CC
R
CE
GE
V
E
CE
GE1
G
= 10mA, V
di
= 100A, V
Test Conditions
Test Conditions
= 300V, I
= V
= V
F
= 6.3 , Resistive
= 10V, V
/dt = -200A/ s
GE
= V
C
GE
CES
GES
j
= 100A, V
) does not exceed T
E
E
Symbol
= 15V, T
GE2
V
V
= 15V, T
/dt = -200A/ s
/dt = -200A/ s
T
V
I
I
, V
, V
CES
GES
CM
EM
P
I
T
I
stg
–
–
–
iso
CE
C
C
E
GE
GE
c
j
GE
CE
= 15V,
= 100A,
= 10V
= 0V
= 0V
= 0V
= 0V
j
j
GE
= 125°C
= 25°C
= 15V
j(max)
CM100E3U-12H
HIGH POWER SWITCHING USE
rating.
Min.
Min.
-40 to 150
-40 to 125
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
MITSUBISHI IGBT MODULES
2.5~3.5
3.5~4.5
2500
600
±20
200*
200*
400
310
100
100
CM100E3U-12H
200
Typ.
Typ.
–
–
6
2.4
2.6
–
–
–
–
–
–
–
–
–
–
0.24
–
0.24
INSULATED TYPE
100
250
200
300
160
160
Max.
Max.
1
0.5
7.5
3.0
–
–
2.6
2.6
8.8
4.8
1.3
–
–
Amperes
Amperes
Amperes
Amperes
Grams
Watts
N · m
N · m
Units
Vrms
Units
Units
Sep.1998
Volts
Volts
°C
°C
Volts
Volts
Volts
Volts
Volts
mA
nC
nF
nF
nF
ns
ns
ns
ns
ns
ns
A
C
C