EN29LV160A EON [Eon Silicon Solution Inc.], EN29LV160A Datasheet
EN29LV160A
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EN29LV160A Summary of contents
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... The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems. ...
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... A19 DQ5 DQ12 A18 NC DQ2 DQ10 DQ8 A5 DQ0 CE# ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 2 Rev. C, Issue Date: 2005/01/07 EN29LV160A 48 A16 47 BYTE# 46 Vss 45 DQ15/A-1 44 DQ7 43 DQ14 42 DQ6 41 DQ13 40 DQ5 39 DQ12 38 DQ4 37 Vcc 36 DQ11 35 DQ3 34 ...
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... Not Connected to anything BYTE# Byte/Word Mode This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. FIGURE 1. LOGIC DIAGRAM EN29LV160A A0 – A19 Reset# CE# OE# WE# Byte# ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 3 Rev. C, Issue Date: 2005/01/07 EN29LV160A DQ0 – DQ15 (A-1) RY/BY# ...
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... Table 2. Top Boot Sector Address Tables (EN29LV160AT) Sector A19 A18 A17 A16 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 ...
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... Table 3. Bottom Boot Sector Address Tables (EN29LV160AB) Sector A19 A18 A17 A16 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 ...
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... Block Protect Switches Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable STB Timer ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 6 Rev. C, Issue Date: 2005/01/07 EN29LV160A EN29LV160A - DQ0-DQ15 (A-1) Input/Output Buffers STB Data Latch Logic Y-Decoder Y-Gating X-Decoder Cell Matrix ...
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... ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 7 Rev. C, Issue Date: 2005/01/07 EN29LV160A DQ8-DQ15 Byte# Byte# DQ0-DQ7 = High-Z OUT OUT D D High High-Z High-Z High-Z High-Z High-Z High-Z ...
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... DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Standby Mode The EN29LV160A has a CMOS-compatible standby mode, which reduces the current to < 1µA (typical placed in CMOS-compatible standby when the CE# pin BYTE# pin must also be at CMOS input levels. The device also has a TTL-compatible standby mode, which reduces the maximum V current to < ...
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... The second method is meant for programming equipment. This method requires applied to both OE# and A9 pin and non-standard microprocessor timings are used. This method is described in a separate document called EN29LV160A Supplement, which can be obtained by contacting a representative of Eon Silicon Solution, Inc. Temporary Sector Unprotect This feature allows temporary unprotection of previously protected sector groups to change data while in-system ...
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... Max. timeout for byte/word write 2^N times typical Max. timeout for buffer write 2^N times typical Max. timeout per individual block erase 2^N times typical Max timeout for full chip erase 2^N times typical (00h = not supported) ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 10 Rev. C, Issue Date: 2005/01/07 EN29LV160A ...
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... Simultaneous Operation 0000h 00 = Not Supported Supported Burst Mode Type 0000h 00 = Not Supported Supported Page Mode Type 0000h 00 = Not Supported Word Page Word Page ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 11 Rev. C, Issue Date: 2005/01/07 EN29LV160A Description Description ...
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... IL WE#. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications the device will not accept commands on the rising edge of IH ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 12 Rev. C, Issue Date: 2005/01/07 EN29LV160A . The LKO . To initiate a IH ...
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... COMMAND DEFINITIONS The operations of the EN29LV160A are selected by one or more commands written into the command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences written at specific addresses via the command register. ...
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... Word / Byte Programming Command The device can be programmed by byte or by word, depending on the state of the Byte# Pin. Programming the EN29LV160A is performed by using a four-bus-cycle operation (two unlock write cycles followed by the Program Setup command and Program Data Write cycle). When the program command is executed, no additional CPU controls or timings are necessary ...
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... The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Addresses are don’t-cares when writing the Erase Suspend command. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 15 Rev. C, Issue Date: 2005/01/07 EN29LV160A ...
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... WRITE OPERATION STATUS DQ7 DATA# Polling The EN29LV160A provides DATA# polling on DQ7 to indicate the status of the embedded operations. The DATA# polling feature is active during Byte Programming, Sector Erase, Chip Erase, and Erase Suspend. (See Table 10) When the embedded Programming is in progress, an attempt to read the device will produce the complement of the data written to DQ7 ...
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... DQ6 Toggle Bit I The EN29LV160A provides a “Toggle Bit” on DQ6 to indicate the status of the embedded programming and erase operations. (See Table 6) During an embedded Program or Erase operation, successive attempts to read data from the device at any address (by active OE# or CE#) will result in DQ6 toggling between “zero” and “one”. Once the embedded Program or Erase operation is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts ...
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... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. DQ7 DQ6 DQ5 DQ3 DQ7# Toggle 0 N/A 0 Toggle N/A Toggle Data Data Data Data DQ7# Toggle 0 N/A ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 18 Rev. C, Issue Date: 2005/01/07 EN29LV160A RY/BY DQ2 # No 0 toggle 1 Toggle 0 Toggle 1 Data 1 N/A 0 ...
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... Chip Erase, Erase or Erase suspend on currently addressed Sector. (When DQ5=1, Erase Error due to currently addressed Sector. Program during Erase Suspend on- going at current address Erase Suspend read on DQ2 non Erase Suspend Sector ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 19 Rev. C, Issue Date: 2005/01/07 EN29LV160A ...
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... See the Command Definitions section for more information. 555H / AAH 2AAH / 55H 555H / A0H PROGRAM ADDRESS / PROGRAM DATA This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. START Verify Data? Last Address? Yes ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 20 Rev. C, Issue Date: 2005/01/07 EN29LV160A ...
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... Chip Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Yes Sector Erase 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H Sector Address/30H ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 21 Rev. C, Issue Date: 2005/01/07 EN29LV160A ...
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... DQ7 = Data DQ5 = 1? Yes Read Data (1) DQ7 = Data? No Fail Start Read Data twice DQ6 = Toggle? No DQ5 = 1? Read Data twice (2) DQ6 = Toggle? Fail ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 22 Rev. C, Issue Date: 2005/01/07 EN29LV160A Yes Yes Pass No Yes Yes No Yes Pass ...
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... Wait 0.4 µs Read from sector address with Data = 01h? Yes Yes Yes Protect another sector? No Remove V ID from RESET# Write reset command Sector Protect complete ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 23 Rev. C, Issue Date: 2005/01/07 EN29LV160A Reset PLSCNT = 1 ...
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... Wait 0.4 µS Read from sector address with Set up next sector Data = 00h? address Yes No Last sector verified? Yes Remove V from Write reset ID RESET# command ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 24 Rev. C, Issue Date: 2005/01/07 EN29LV160A Sector Unprotect complete ...
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... Byte program, Sector or Chip Erase in progress -0.5 0.7 x Vcc Vcc Vcc - = -100 µ 0.4V 10 2.3 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 25 Rev. C, Issue Date: 2005/01/07 EN29LV160A Max Unit Typ ±5 µA ±5 µ 0.4 1 5.0 µ 0.8 V Vcc ± ...
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... Output timing measurement reference levels This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 3.3 V Ω 2.7 k Ω 6.2 k -70 -90 1 TTL Gate 30 100 5 5 0.0-3.0 0.0-3.0 1.5 1.5 1.5 1.5 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 26 Rev. C, Issue Date: 2005/01/07 EN29LV160A Unit ...
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... Reset Timings During Automatic Algorithms This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Speed options Test Setup -70 Max Max Min Min READY t RH ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 27 Rev. C, Issue Date: 2005/01/07 EN29LV160A Unit -90 µs 20 500 nS 500 ...
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... Note: Switching BYTE# pin not allowed during embedded operations This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Speed -70 Min 0 Min 0 Min 0 t CBH t BCS t RBH ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 28 Rev. C, Issue Date: 2005/01/07 EN29LV160A Unit - ...
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... IL Max OE Max Max Max Min t RC Addresses Stable t ACC Output Valid ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 29 Rev. C, Issue Date: 2005/01/07 EN29LV160A Speed Options -70 -90 Unit ...
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... Polling DATA# Min 0 Min 0 Min 0 Min 45 Min 20 Typ 8 Max 300 Typ 0.5 Max 10 Typ 17.5 Min 50 Min 500 ID ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 30 Rev. C, Issue Date: 2005/01/07 EN29LV160A -90 Unit µ ...
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... Data Polling Min 0 Min 0 Min 0 Min 35 Min 20 Typ 8 Max 300 Typ 0.5 Max 10 Typ 17.5 Max Min 50 Min 500 ID ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 31 Rev. C, Issue Date: 2005/01/07 EN29LV160A -90 Unit µ ...
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... Test Setup OUT Test Conditions 150°C 125°C ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 32 Rev. C, Issue Date: 2005/01/07 EN29LV160A Comments to erasure Excludes system level overhead Minimum 1000K cycles Max 12.0 V Vcc + 1.0 V 100 mA Typ Max Unit 6 7 ...
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... Read Status Data (last two cycles 0x555 for chip erase WHWH2 WHWH3 0x30 Status t DH BUSY ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 33 Rev. C, Issue Date: 2005/01/07 EN29LV160A VA D OUT t RB =true data at read address. out ...
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... Program Command Sequence (last 2 cycles WHWH1 PD Status t BUSY is the true data at the program address. OUT measurement references. It cannot occur as shown during a valid ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 34 Rev. C, Issue Date: 2005/01/07 EN29LV160A PA D OUT t RB ...
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... Comple- True Complement ment Status Status Data Data Valid Status (first read) (second d) ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 35 Rev. C, Issue Date: 2005/01/07 EN29LV160A VA Valid Data True Valid Data VA VA Valid Data Valid Status (stops toggling) ...
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... Sector Erase 0x10 for Chip Erase Enter Erase Erase Suspend Suspend Program Enter Suspend Suspend Read Program ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 36 Rev. C, Issue Date: 2005/01/07 EN29LV160A VA D OUT Erase Resume Enter Erase Erase Erase Suspend Complete Read ...
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... Speed Option -70 Min Min Valid Valid 60h 40h Verify Sector Protect: 150 uS Sector Unprotect ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 37 Rev. C, Issue Date: 2005/01/07 EN29LV160A Unit -90 500 µ VIDR 0V t VIDR Valid Status > ...
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... FIGURE 14. TSOP 12mm x 20mm This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 38 Rev. C, Issue Date: 2005/01/07 EN29LV160A ...
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... This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 39 Rev. C, Issue Date: 2005/01/07 EN29LV160A ...
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... FIGURE 15. 48TFBGA package outline This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 40 Rev. C, Issue Date: 2005/01/07 EN29LV160A ...
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... V for periods up to 20ns. See figure cc 1 Value - Regulated Voltage Range: 3.0-3.6V Full Voltage Range: 2.7 to 3.6V Vcc +1.5V Maximum Positive Overshoot ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 41 Rev. C, Issue Date: 2005/01/07 EN29LV160A Unit °C °C ° –1.0V for ss Unit °C V Waveform ...
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... BOOT CODE SECTOR ARCHITECTURE T = Top boot Sector B = Bottom boot Sector BASE PART NUMBER EN = Eon Silicon Solution Inc. 29LV = FLASH, 3V Read Program Erase 160 = 16 Megabit ( 16 version identifier ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 42 Rev. C, Issue Date: 2005/01/07 EN29LV160A ...
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... Preliminary draft B Initial Release 1. Update Eon logo Correct a typo on page 39, dimension E and N corrected. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., www.essi.com.tw 43 Rev. C, Issue Date: 2005/01/07 EN29LV160A Date 2004/10/01 2004/11/26 2005/01/07 ...