K4X51163PE-L SAMSUNG [Samsung semiconductor], K4X51163PE-L Datasheet - Page 15

• Manufacturer Part Number: K4X51163PE-L
• Description: 32Mx16 Mobile DDR SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4X51163PE - L(F)E/G
15. AC Operating Test Conditions
16. Input/Output Capacitance(V
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM)
Output timing measurement reference level
Input timing measurement reference level
Input signal minimum slew rate
AC input levels (Vih/Vil)
Output load condition
Parameter
Output
Parameter
10.6KΩ
Output
DD
=1.8
(V
Figure 5. DC Output Load Circuit
Figure 6. AC Output Load Circuit
DD
,
= 1.7V to 1.95V, T
V
DDQ
=1.8V
1.8V
Z0=50Ω
13.9KΩ
20pF
V
V
- 18 -
OH
OL
,
Symbol
0.8 x VDDQ / 0.2 x VDDQ
T
COUT
CIN3
CIN1
CIN2
(DC) = 0.1 x VDDQ , I
(DC) = 0.9 x VDDQ , I
C
c
= 25°C
= -25 to 85°C)
See Figure 6
0.5 x VDDQ
0.5 x VDDQ
Value
Vtt=0.5 x V
1.0
50Ω
20pF
,
f=1MHz)
Min
1.5
1.5
2.0
2.0
DDQ
OL
OH
= 0.1mA
= -0.1mA
Mobile DDR SDRAM
Max
3.0
3.5
4.5
4.5
V/ns
Unit
V
V
V
Unit
June 2007
pF
pF
pF
pF