S5930-256S HAMAMATSU [Hamamatsu Corporation], S5930-256S Datasheet

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S5930-256S

Manufacturer Part Number
S5930-256S
Description
NMOS linear image sensor Built-in thermoelectric cooler ensures long exposure time and stable operation.
Manufacturer
HAMAMATSU [Hamamatsu Corporation]
Datasheet
I M A G E S E N S O R
NMOS linear image sensor
S5930/S5931 series
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active
area, high UV sensitivity yet very low noise. The built-in thermoelectric cooler (air cooled) allows a long exposure time achieving a high S/N even
at low light levels. The cap uses a sapphire glass window hermetically welded for high reliability.
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Built-in thermoelectric cooler ensures long exposure time and stable operation.
Features
Wide active area
Pixel pitch: 50 µm (S5930 series)
Pixel height: 2.5 mm
High UV sensitivity with good stability
Low dark current and high saturation charge allow a long
integration time and a wide dynamic range at room temperature
Excellent output linearity and sensitivity spatial uniformity
Start pulse and clock pulses are CMOS logic compatible
Built-in air-cooled thermoelectric cooler
(setting temperature: 0 ˚C)
25 µm (S5931 series)
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Applications
Multichannel spectrophotometry
Image readout system
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S5930-256S Summary of contents

Page 1

... UV sensitivity yet very low noise. The built-in thermoelectric cooler (air cooled) allows a long exposure time achieving a high S/N even at low light levels. The cap uses a sapphire glass window hermetically welded for high reliability. Features l Wide active area Pixel pitch: 50 µm (S5930 series) 25 µm (S5931 series) Pixel height: 2 High UV sensitivity with good stability ...

Page 2

... NMOS linear image sensor Figure 2 Active area structure END OF SCAN ACTIVE VIDEO Vss DUMMY VIDEO OXIDATION SILICON KMPDC0020EA S5930 SERIES: a=50 µm, b=45 µm S5931 SERIES: a=25 µm, b=20 µm φ λ λ S5930/S5931 series TYPE SILICON P TYPE SILICON KMPDA0132EA µ ...

Page 3

... Figure 3 Dimensional outlines (unit: mm) S5930-256S, S5931-512S 12.8 5.0 32.0 ± 0.3 50.0 0.46 2.54 27.94 NMOS linear image sensor Condition φ φ φ φ φ φ φ φ φ φ φ φ φ φ ...

Page 4

... NMOS linear image sensor KMPDC0115EA φ φ Figure 6 Output charge vs. exposure (Ta=25 ˚C) 1200 KMPDB0163EA S5930/S5931 series φ Ω (Typ. Vb light source: 2856 SATURATION 1 10 CHARGE S5930 SERIES 0 10 S5931 SERIES -1 10 SATURATION EXPOSURE - ...

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... TEMPERATURE (Th - Tc) (˚C) NMOS linear image sensor  Figure 8 Heat absorption vs. temperature (Tc=0 °C) 2 KMPDB0165EA Figure 10 Heat absorption vs. temperature (Tc=20 °C) 3 KMPDB0167EA Ω S5930/S5931 series 10 8 3.2 A 2 2 0 TEMPERATURE (Th - Tc) (˚ ...

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... Figure 14 Heat absorption vs. temperature (Tc=20 °C) 2 KMPDB0171EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K. S5930/S5931 series 10 8 3 ...

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