SI8902EDB_06 VISHAY [Vishay Siliconix], SI8902EDB_06 Datasheet - Page 2

• Manufacturer Part Number: SI8902EDB_06
• Description: Bi-Directional N-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model Si8902EDB
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
Parameter
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
R
V
I
t
t
ss(on)
GS(th)
sS(on)
d(on)
d(off)
g
t
t
fs
r
f
I
ss
≅ 1 A, V
V
V
V
V
V
V
V
Test Condition
V
sS
sS
ss
GS
GS
GS
GS
sS
= V
= 5 V, V
= 10 V, R
= 4.5 V, I
= 3.7 V, I
= 2.5 V, I
= 1.8 V, I
= 10 V, I
GEN
GS
, I
= 4.5 V, R
D
GS
= 250 µA
L
SS
ss
ss
ss
ss
= 4.5 V
= 10 Ω
= 1 A
= 1 A
= 1 A
= 1 A
= 1 A
G
= 6 Ω
Simulated
Data
0.046
0.057
0.038
0.040
0.51
109
11
4
2
7
4
Measured
Data
S-60075Rev. B, 23-Jan-06
0.038
0.041
0.048
0.060
17
10
20
Document Number: 72956
1
3
Unit
µs
Ω
V
A
S