LPT770-G SIEMENS [Siemens Semiconductor Group], LPT770-G Datasheet - Page 4

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LPT770-G

Manufacturer Part Number
LPT770-G
Description
TOPLED RG
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet

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Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge des emittierten Lichtes
Wavelength at peak emission
I
Dominantwellenlänge
Dominant wavelength
I
Spektrale Bandbreite bei 50 %
Spectral bandwidth at 50 %
I
Abstrahlwinkel bei 50 %
Viewing angle at 50 %
Durchlaßspannung
Forward voltage
I
Sperrstrom
Reverse current
V
Kapazität
Capacitance
V
Schaltzeiten:
Switching times:
I
I
I
Semiconductor Group
F
F
F
F
V
V
F
R
R
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 100 mA,
from 10 % to 90 %
from 90 % to 10 %
= 5 V
= 0 V,
f
= 1 MHz
T
t
p
A
= 10 s,
= 25 ˚C)
I
v
R
I
L
v
= 50
(Vollwinkel)
I
rel max
I
rel max
(max.)
(max.)
(typ.)
(typ.)
(typ.)
(typ.)
(typ.)
(typ.)
(typ.)
(typ.)
(typ.)
(typ.)
(typ.)
4
Symbol
Symbol
2
V
V
I
I
C
t
t
r
f
R
R
peak
dom
F
F
0
LS
635
628
45
120
2.0
2.6
0.01
10
12
300
150
LS T770, LO T770, LY T770
LO
610
605
40
120
2.0
2.6
0.01
10
8
300
150
Values
Werte
LY
586
590
45
120
2.0
2.6
0.01
10
10
300
150
LG T770, LP T770
LG
565
570
25
120
2.0
2.6
0.01
10
15
450
200
LP
557
560
22
120
2.0
2.6
0.01
10
15
450
200
Einheit
Unit
nm
nm
nm
Grad
deg.
V
V
pF
ns
ns
A
A

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