ACE2301B ACE [ACE Technology Co., LTD.], ACE2301B Datasheet - Page 2

• Manufacturer Part Number: ACE2301B
• Description: P-Channel Enhancement Mode MOSFET
• Manufacturer: ACE [ACE Technology Co., LTD.]

Ordering information
Electrical Characteristics
T
Note: 1. Pulse width limited by maximum junction temperature
A
=25
Drain-Source On-state Resistance
Drain-Source Breakdown Voltage
ACE2301B XX + H
Gate-Source Leakage Current
2. Pulse test: PW≦300us, duty cycle≦2%
3. For design AID only, not subject to production testing
4. Switching time is essentially independent of operating temperature
O
Forward Transconductance
C unless otherwise noted
Gate Threshold Voltage
Feedback Capacitance
Diode Forward Voltage
Drain Cut-off Current
Turn-On Delay Time
Turn-Off Delay Time
Output Capacitance
Input Capacitance
Parameter
Drain-source diode characteristics and maximum ratings
BM : SOT-23-3
Halogen - free
Pb - free
Switching characteristics
Dynamic characteristics
Symbol
V
R
R
V
T
(BR)DSS
t
DS(ON
C
I
I
DS(ON)
C
V
C
g
GS(th)
d(off)
DSS
GSS
d(on)
Off characteristics
On characteristics
FS
oss
SD
rss
iss
)
V
V
V
I
V
V
D
V
V
DS
V
GS
I
GS
=-1A, V
V
DS
S
GS
DS
GS
DS
=-1.6A,V
=V
=-4.5V, I
DD
P-Channel Enhancement Mode MOSFET
Conditions
=0V, I
=-20V, V
=-2.5V, I
=-5V, I
=±8V, V
=-6V, V
f=1.0MHz
=-6V,R
RG=6R
GS
, I
GEN
D
D
=-250uA
D
=-250uA
(3)
(3)
D
=-2.8A
GS
GS
DS
L
=-4.5V
GS
=-2.8A
D
=6R
=-2A
=0V
=0V
=0V
=0V
-0.45
Min.
-0.5
-20
-0.75
Typ.
100
120
415
223
6.5
ACE2301B
13
42
87
Max.
±100
VER 1.3
130
200
-1.5
-1.2
25
70
-1
Unit
mR
uA
nA
pF
ns
V
V
S
V
2