HS9-1254RH INTERSIL [Intersil Corporation], HS9-1254RH Datasheet - Page 2

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HS9-1254RH

Manufacturer Part Number
HS9-1254RH
Description
Radiation Hardened, High Speed, Low Power Dual Operational Amplifier with Disable
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
Die Characteristics
DIE DIMENSIONS
GLASSIVATION
METALLIZATION
Metal 1
Metal 2
Metallization Mask Layout
NOTE:
1. This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of the DISABLE inputs when
Size: 1750 m x 2330 m (69 mils x 92 mils)
Thickness: 483 m (19 mils)
Type: Nitride
Thickness: 4k
Type: AlCu(2%)/TiW
Thickness: 8k
Type: AlCu(2%)
Thickness: 16k
using asymmetrical supplies (e.g., V+ = 10V, V- = 0V).
Å
Å
Å
0.5k
0.4k
0.8k
Å
Å
DISABLE1
DISABLE2
Å
+IN1
+IN2
V-
-IN1
HS-1254RH
HS-1254RH
-IN2
2
SUBSTRATE
BACKSIDE FINISH
SUBSTRATE POTENTIAL
TRANSISTOR COUNT:
OUT1
DI, Bonded Wafer
Silicon
Floating (Recommend connection to V-)
180
GND (SEE NOTE 1)
V-
NC
V+
OUT2
NC

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