K4S51323P SAMSUNG [Samsung semiconductor], K4S51323P Datasheet - Page 5

• Manufacturer Part Number: K4S51323P
• Description: 4M x 32Bit x 4 Banks Mobile-SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC CHARACTERISTICS
K4S51323PF-M(E)F
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported(In commercial Temp : Max 40°C/Max 70°C).
4. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC
CC
CC
PS CKE & CLK ≤ V
NS
PS CKE & CLK ≤ V
NS
4
5
6
N
N
P
P
CKE ≤ V
CKE ≥ V
Input signals are changed one time during
20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during
20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
Burst length = 1
t
I
I
Page burst
4Banks Activated
t
RC
RC
O
CCD
O
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
Test Condition
IL
IL
(max), t
(max), t
CC
CC
SS
= 10ns
= 10ns
= 0V, T
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
5
= ∞
= ∞
A
1/2 of Full Array
1/4 of Full Array
Internal TCSR
= -25 to 70°C)
CC
CC
Full Array
CC
CC
= 10ns
= 10ns
= ∞
= ∞
100
150
170
-75
Max 40
400
320
280
Version
120
170
-90
0.6
0.6
90
20
10
40
10
2
2
Mobile-SDRAM
Max 70
900
600
500
120
170
-1L
80
September 2004
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
°C
Note
1
1
2
3