K4S511632M-TL1H SAMSUNG [Samsung semiconductor], K4S511632M-TL1H Datasheet - Page 5

• Manufacturer Part Number: K4S511632M-TL1H
• Description: 512Mbit SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

ABSOLUTE MAXIMUM RATINGS
K4S511632M
Note :
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to V
Notes :
CAPACITANCE
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Clock
RAS, CAS, WE, CS, CKE
Address
DQ
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
DQM
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. -75 only specify a maximum value of 3.5pF
2. -75 only specify a maximum value of 3.8pF
3. -75 only specify a maximum value of 6.0pF
1. V
2. V
3. Any input 0V
Parameter
15
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
Parameter
(max) = 5.6V AC.The overshoot voltage duration is
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ
V
Symbol
DD
.
V
V
V
A
V
, V
I
OH
OL
LI
IH
IL
= 23 C, f = 1MHz, V
DDQ
V
V
Symbol
Min
-0.3
Symbol
3.0
2.0
2.4
-10
DD
IN
C
C
C
C
-
T
C
DQM
, V
I
ADD
OUT
CLK
, V
P
STG
OS
IN
D
OUT
DDQ
REF
SS
= 0V, T
= 1.4V
3ns.
3ns.
Typ
3.3
3.0
A
0
-
-
-
= 0 to 70 C)
200 mV)
Min
2.5
2.5
2.5
2.5
4.0
V
DD
Max
3.6
0.8
0.4
-55 ~ +150
10
-1.0 ~ 4.6
-1.0 ~ 4.6
-
+0.3
Value
50
1
Max
4.0
5.0
5.0
5.0
6.5
Unit
uA
V
V
V
V
V
Rev. 0.3 May. 2002
CMOS SDRAM
I
OH
I
OL
Unit
mA
W
Note
V
V
Unit
C
= -2mA
= 2mA
pF
pF
pF
pF
pF
1
2
3