K4T1G044QA SAMSUNG [Samsung semiconductor], K4T1G044QA Datasheet - Page 20

• Manufacturer Part Number: K4T1G044QA
• Description: 1Gb A-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

1G A-die DDR2 SDRAM
Parameter
CAS to CAS command delay
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
Internal read to precharge command delay
Exit self refresh to a non-read command
Exit self refresh to a read command
Exit precharge power down to any non-read com-
mand
Exit active power down to read command
Exit active power down to read command
(slow exit, lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE asyn-
chronously drops LOW
Symbol
tCCD
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
tXARDS
t
t
t
t
t
t
t
tANPD
tAXPD
tOIT
tDelay
CKE
AOND
AON
AONPD
AOFD
AOF
AOFPD
tIS+tCK +tIH
tAC(min)+2
tAC(min)+2
tRFC + 10
WR+tRP
tAC(min)
tAC(min)
7 - AL
min
200
7.5
2.5
7.5
15
2
3
2
3
8
0
2
2
DDR2-667
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tAC(max)+0.
2tCK+tAC(m
2.5tCK+tAC(
tAC(max)+
max)+1
ax)+1
max
2.5
0.6
12
x
2
7
x
x
x
x
tIS+tCK +tIH
tAC(min)+2
tAC(min)+2
tRFC + 10
tAC(min)
WR+tRP
tAC(min)
6 - AL
min
200
7.5
7.5
2.5
15
2
2
3
2
3
8
0
2
DDR2-533
2tCK+tAC(m
tAC(max)+ 0.6
tAC(max)+1
tAC(max)+1
2.5tCK+
ax)+1
max
2.5
12
x
x
2
x
x
x
tIS+tCK +tIH
tAC(min)+2
tAC(min)+2
tRFC + 10
WR+tRP
tAC(min)
tAC(min)
6 - AL
min
200
7.5
2.5
15
10
3
2
2
2
3
8
0
2
DDR2-400
DDR2 SDRAM
Rev. 1.1 Aug. 2005
tAC(max)+ 0.6
tAC(max)+1
tAC(max)+1
2tCK+tAC
(max)+1
2.5tCK+
max
2.5
12
2
x
x
x
x
x
Units Notes
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
13, 25
9, 10
23
33
36
26
24
11
9