M72DW64000B90ZT STMICROELECTRONICS [STMicroelectronics], M72DW64000B90ZT Datasheet - Page 13

• Manufacturer Part Number: M72DW64000B90ZT
• Description: 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 6. Flash DC Characteristics
Note: 1. Sampled only, not 100% tested.
I
Symbol
CC3
I
CC1
V
I
V
V
V
V
V
I
CC2
V
I
I
LKO
LO
PP
OH
PP
OL
LI
2. In Dual operations the Supply Current will be the sum of
IH
ID
IL
(1,2)
(2)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby)
Supply Current (Program/
Erase)
Input Low Voltage
Input High Voltage
Voltage for
Acceleration
Current for
Acceleration
Output Low Voltage
Output High Voltage
Identification Voltage
Program/Erase Lockout Supply
Voltage
Parameter
V
V
PP
PP
/WP
/WP
Program
Program
Controller active
Program/Erase
E
V
V
RP
0V
E
Test Condition
0V
F
CC
CC
I
F
I
OH
I
CC1
= V
F
OL
= V
f = 6MHz
= 3.0V ±10%
= 3.0V ±10%
= V
V
= –100
= 1.8mA
V
IL
(read) and
OUT
CC
IN
, G = V
CC
±0.2V,
V
±0.2V
V
PP
µ
V
V
V
CC
A
PP
/WP = V
CC
IL
IH
I
CC3
/WP =
or V
,
(program/erase).
IH
PP
V
0.7V
CC
–0.5
11.5
11.5
Min
1.8
–0.4
CC
V
M72DW64000B
CC
Max
12.5
0.45
12.5
100
0.8
2.3
±1
±1
10
20
20
15
+0.3
Unit
mA
mA
mA
mA
µ
µ
µ
13/19
V
V
V
V
V
V
V
A
A
A