SE2525L-EK1 SIGE [SiGe Semiconductor, Inc.], SE2525L-EK1 Datasheet - Page 5

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SE2525L-EK1

Manufacturer Part Number
SE2525L-EK1
Description
Manufacturer
SIGE [SiGe Semiconductor, Inc.]
Datasheet
802.11b AC Electrical Characteristics
Conditions: V
Detector Selection Logic
Conditions: V
28-DST-01 Rev 2.1 Apr-25-2006
Symbol
VSWR
ACPR
STAB
∆S
P
f
S
2f,
3f
L-U
1dB
21
21
Open Circuit
Open Circuit
SLOPE
Ground
Ground
Stability
Frequency Range
Output 1dB compression point
Small Signal Gain
Gain Variation over band
Harmonics
Adjacent Channel Power Ratio
±11 MHz offsets from carrier
±22 MHz offsets from carrier
Tolerance to output load
mismatching
Semiconductor’s SE2525L-EV1 evaluation board, unless otherwise noted.
evaluation board, unless otherwise noted
CC
CC
SEL
= V
= V
EN
EN
Parameter
= 3.3 V, f = 2.45 GHz, V
= 3.3V, V
B
RangeCharger™ 2.4GHz Power Amplifier with Power Detector
V
AC Coupled
AC Coupled
DET
= V
Ground
Ground
IN/DET
REG
, T
No modulation
P
P
f
P
P
Mbps CCK signal, BT =
0.45
P
P
Mbps CCK signal, BT =
0.45, VSWR = 6:1
P
P
Mbps CCK signal, BT =
0.45, VSWR = 10:1 All
Phases
IN
B
SEL
IN
IN
OUT
OUT
IN
OUT
IN
OUT
A
= 2400 to 2500 MHz
connected to V
= -25 dBm
= -25 dBm,
≤ 2 dBm,
≤ 2 dBm,
= 25°C, as measured on SiGe Semiconductor’s SE2525L-EV1
Confidential
= 23 dBm, CW
= 23 dBm, 11
= 23 dBm, 11
= 23 dBm, 11
Conditions
QA042506
REG
Detector Slope
, T
Negative
Negative
Positive
Positive
A
= 25 °C, as measured on SiGe
All non-harmonically related outputs less
2400
Min.
28
-
-
-
-
-
-
than -50 dBc/100 kHz
Preliminary Information
Typ.
25.5
2.0
-27
-47
-32
-52
31
No damage
Detector Signal Source
2500
Max.
External
External
-
-
-
-
-
-
-
Internal
Internal
SE2525L
dBm/MHz
dBm/MHz
MHz
dBm
Unit
dBr
dB
dB
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