IXFN-26N90 IXYS [IXYS Corporation], IXFN-26N90 Datasheet - Page 2

• Manufacturer Part Number: IXFN-26N90
• Description: HiPerFETTM Power MOSFETs Single Die MOSFET
• Manufacturer: IXYS [IXYS Corporation]

© 2000 IXYS All rights reserved
Symbol
g
C
0
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
S
SM
RM
d(on)
d(off)
f
r
rr
fs
SD
oss
thJC
thCK
iss
rss
g(on)
gs
gd
RM
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
F
F
DS
GS
= I
= I
= 10 V; I
S
= 0 V
S
V
V
R
V
, -di/dt = 100 A/ms, V
, V
GS
GS
GS
G
GS
= 1 W (External)
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
JM
, pulse test
R
= 100 V
DSS
DSS
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
(T
(T
, I
, I
J
J
D
D
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
26N90
25N90
26N90
25N90
= 0.5 • I
= 0.5 • I
4,881,106
4,931,844
min.
D25
D25
18
min.
Characteristic Values
Characteristic Values
5,017,508
5,034,796
typ.
typ.
0.05
1.4
800 1000
300
130
240
107
10
8.7
28
60
35
24
56
max.
max.
10.8
0.21 K/W
375
104
100
250
5,049,961
5,063,307
1.5
26
25
K/W
nC
nC
nC
mC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
5,187,117
5,237,481
miniBLOC, SOT-227 B
5,486,715
5,381,025
Dim.
M4 screws (4x) supplied
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
31.50
14.91
30.12
38.00
11.68
12.60
25.15
26.54
24.59
-0.05
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
Min.
Millimeter
31.88
15.11
30.30
38.23
12.22
12.85
25.42
26.90
25.07
Max.
IXFN 25N90
IXFN 26N90
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
0.1 -0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
Min.
Inches
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Max.
2 - 4