BTA212-800F Philips Semiconductors, BTA212-800F Datasheet
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BTA212-800F
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BTA212-800F Summary of contents
Page 1
... 0 / over any period - Product specification BTA212 series D, E and F MAX. MAX. UNIT BTA212- 600D BTA212- 600E 800E BTA212- 600F 800F 600 800 SYMBOL MAX. ...
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... V = 400 110 ˚ T(RMS) dV /dt = 0.1V/ s; gate com open circuit DRM(max 0 / Product specification BTA212 series D, E and F MIN. TYP. MAX. UNIT - - 1.5 K 2.0 K K/W TYP. MAX. UNIT ...D ...D ...E ...F 1 ...
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... VGT(25 C) 1.6 I TSM 1.4 T time 1.2 1 0.8 0.6 0.4 100 1000 - Product specification BTA212 series D, E and F BT138 100 Tmb / C 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 99˚C. mb VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...
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... dIcom/dt (A/ms) 100 100 150 ( (25˚C), Fig.12. Minimum Typical, critical rate of change commutating current Product specification BTA212 series D, E and F typ max 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-mb pulse width t ...
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... Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 2000 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. 5 Product specification BTA212 series D, E and F 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.000 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 2000 BTA212 series D, E and F 6 Product specification Rev 1.000 ...