UPA836 NEC, UPA836 Datasheet - Page 2

• Manufacturer Part Number: UPA836
• Description: NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• Manufacturer: NEC

ABSOLUTE MAXIMUM RATINGS (T
Note
ELECTRICAL CHARACTERISTICS
Notes 1. Pulse measurement: PW
2
(1) Q1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Feedback capacitance
Insertion power gain
Noise figure
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
110 mW must not be exceeded for 1 element.
PARAMETER
PARAMETER
method), with emitter connected to guard pin of capacitance meter.
SYMBOL
SYMBOL
V
V
V
S
I
I
T
h
C
NF
P
CBO
EBO
I
T
CBO
CEO
EBO
f
21e
350 s, Duty cycle
FE
C
stg
T
re
T
j
2
A
= 25 C)
V
V
V
V
V
V
V
CB
EB
CE
CE
CB
CE
CE
= 1 V, I
= 5 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
150 in 1 element
E
C
C
C
E
C
C
CONDITION
= 0
= 0
= 10 mA
= 10 mA, f = 2 GHz
= 0, f = 1 MHz
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz
150
2%
Q1
30
9
6
2
Note 1
200 in 2 elements
Note 2
65 to +150
RATING
MIN.
Note
75
7
150 in 1 element
100
150
Q2
9
6
2
TYP.
0.4
8.5
1.5
12
MAX.
150
0.1
0.1
0.7
2.5
PA836TF
UNIT
UNIT
GHz
mW
mA
pF
dB
dB
V
V
V
C
C
A
A