IS61LV12816-15BI Integrated Silicon Solution, IS61LV12816-15BI Datasheet

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IS61LV12816-15BI

Manufacturer Part Number
IS61LV12816-15BI
Description
Manufacturer
Integrated Silicon Solution
Datasheets

Specifications of IS61LV12816-15BI

Case
BGA
Date_code
02+
IS61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
• High-speed access time: 10, 12, and 15 ns
• CMOS low power operation
• TTL and CMOS compatible interface levels
• Single 3.3V ± 10% power supply
• Fully static operation: no clock or refresh
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
02/05/2003
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
required
Lower Byte
Upper Byte
I/O8-I/O15
I/O0-I/O7
A0-A16
V
GND
DD
OE
WE
CE
UB
LB
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
DESCRIPTION
The
RAM organized as 131,072 words by 16 bits. It is fabricated
using
highly reliable process coupled with innovative circuit design
techniques, yields access times as fast as 10 ns with low
power consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61LV12816 is packaged in the JEDEC standard 44-
pin 400-mil SOJ, 44-pin TSOP (Type II), 44-pin LQFP, and
48-pin mini BGA (6mm x 8mm).
ISSI
ISSI
MEMORY ARRAY
IS61LV12816 is a high-speed, 2,097,152-bit static
COLUMN I/O
's high-performance CMOS technology. This
128K x 16
ISSI
FEBRUARY 2003
®
1

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