MBM29LV160TE90TN Fujitsu, MBM29LV160TE90TN Datasheet

MBM29LV160TE90TN

Manufacturer Part Number

MBM29LV160TE90TN

Description

TSOP

Manufacturer

Fujitsu

Datasheets

1.MBM29LV160TE90TN.pdf (59 pages)

2.MBM29LV160TE90TN.pdf (58 pages)

Specifications of MBM29LV160TE90TN

Date_code

04+

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FUJITSU SEMICONDUCTOR

FLASH MEMORY

CMOS

16M (2M

MBM29LV160TE/BE -

Ordering Part No.

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

GENERAL DESCRIPTION

The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

packages. The device is designed to be programmed in-system with the standard system 3.0 V V

V V

standard EPROM programmers.

The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of high-

speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE),

write enable (WE), and output enable (OE) controls.

The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E

written to the command register using standard microprocessor write timings. Register contents serve as input

to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the device is similar

to reading from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the

Embedded Program

and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the device automatically times the erase pulse widths and

verifies proper cell margins.

Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.)

within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word

at a time using the EPROM programming mechanism of hot electron injection.

PRODUCT LINE UP

DATA SHEET

and 5.0 V V

Part No.

TM*

are not required for write or erase operations. The device can also be reprogrammed in

Algorithm which is an internal algorithm that automatically times the program pulse widths

= 3.3 V

= 3.0 V

+0.3 V

–0.3 V

+0.6 V

–0.3 V

8/1M

70/90/12

—

MBM29LV160TE/160BE

16) BIT

—

PROMs. Commands are

DS05-20883-2E

120

—

supply. 12.0

(Continued)

TM*

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