MBM29DL163BD90PFTN Fujitsu, MBM29DL163BD90PFTN Datasheet

MBM29DL163BD90PFTN

Manufacturer Part Number

MBM29DL163BD90PFTN

Description

SOP

Manufacturer

Fujitsu

Datasheets

1.MBM29DL163BD90PFTN.pdf (76 pages)

2.MBM29DL163BD90PFTN.pdf (75 pages)

Specifications of MBM29DL163BD90PFTN

Date_code

04+

Current page: 1 of 76
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FUJITSU SEMICONDUCTOR

Embedded Erase

FLASH MEMORY

CMOS

16M (2M 8/1M 16) BIT

MBM29DL16XTD/BD

Ordering Part No.

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

FEATURES

• 0.33 m Process Technology

• Simultaneous Read/Write operations (dual bank)

• Single 3.0 V read, program, and erase

PRODUCT LINE UP

PACKAGES

DATA SHEET

Multiple devices available with different bank sizes (Refer to Table 1)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

Minimizes system level power requirements

48-pin plastic TSOP (I)

(FPT-48P-M19)

and Embedded Program

Part No.

Marking Side

= 3.3 V

= 3.0 V

+0.3 V

–0.3 V

+0.6 V

–0.3 V

are trademarks of Advanced Micro Devices, Inc.

48-pin plastic TSOP (I)

Marking Side

(FPT-48P-M20)

-70/90/12

—

MBM29DL16XTD/MBM29DL16XBD

—

Dual Operation

48-pin plastic FBGA

(BGA-48P-M13)

DS05-20874-4E

120

—

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