IS61LV25616AL10TI Integrated Silicon Solution, IS61LV25616AL10TI Datasheet

IS61LV25616AL10TI

Manufacturer Part Number

IS61LV25616AL10TI

Description

TSOP44

Manufacturer

Integrated Silicon Solution

Datasheet

1.IS61LV25616AL10KLI.pdf (17 pages)

Specifications of IS61LV25616AL10TI

Date_code

07+

Current page: 1 of 17
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Integrated Silicon Solution, Inc. — www.issi.com —

Rev. E

02/14/06

IS61LV25616AL

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

FUNCTIONAL BLOCK DIAGRAM

256K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

FEATURES

• High-speed access time:

• CMOS low power operation

• Low stand-by power:

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available

— 10, 12 ns

— Less than 5 m

required

(typ.) CMOS stand-by

Lower Byte

Upper Byte

I/O8-I/O15

I/O0-I/O7

A0-A17

VDD

GND

DECODER

CIRCUIT

CONTROL

CIRCUIT

DATA

I/O

1-800-379-4774

DESCRIPTION

The

static RAM organized as 262,144 words by 16 bits. It is

fabricated using

ogy. This highly reliable process coupled with innovative

circuit design techniques, yields high-performance and low

power consumption devices.

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

The IS61LV25616AL is packaged in the JEDEC standard

44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and

48-pin Mini BGA (8mm x 10mm).

ISSI

MEMORY ARRAY

COLUMN I/O

IS61LV25616AL is a high-speed, 4,194,304-bit

256K x 16

ISSI

's high-performance CMOS technol-

ISSI

FEBRUARY 2006

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