IRF2804S7P International Rectifier Corp., IRF2804S7P Datasheet

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IRF2804S7P

Manufacturer Part Number
IRF2804S7P
Description
SMD
Manufacturer
International Rectifier Corp.
Datasheet

Specifications of IRF2804S7P

Date_code
08+
Features
l
l
l
l
l
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
HEXFET
Absolute Maximum Ratings
I
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
R
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
@T
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
j
j
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
GS
g
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
(Package Limited)
h
G
ij
d
300 (1.6mm from case )
HEXFET
See Fig.12a,12b,15,16
IRF2804S-7P
Typ.
S
0.50
D
–––
–––
–––
10 lbf•in (1.1N•m)
-55 to + 175
Max.
1360
1050
320
230
160
330
± 20
630
2.2
®
R
Power MOSFET
DS(on)
Max.
0.50
V
–––
62
40
I
DSS
D
= 160A
PD - 96891A
= 1.6mΩ
= 40V
D
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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