KTK5132S KEC(Korea Electronics), KTK5132S Datasheet

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KTK5132S

Manufacturer Part Number

KTK5132S

Description

Manufacturer

KEC(Korea Electronics)

Datasheets

1.KTK5132S.pdf (3 pages)

2.KTK5132S.pdf (3 pages)

Specifications of KTK5132S

Date_code

10+

Packing_info

SOT-23

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

KTK5132S-RTK/P

Manufacturer:

KEC

Quantity:

20 000

Company:

H&T Electronics

H&T Electronics

Part Number:

KTK5132S-RTK/P

Quantity:

1 990

Current page: 1 of 3
Download datasheet (431Kb)

2002. 6. 21

ULTRA-HIGH SPEED SWITCHING APPLICATIONS

ANALOG SWITCH APPLICATIONS

FEATURES

・2.5 Gate Drive.

・Low Threshold Voltage : V

・High Speed.

・Small Package.

・Enhancement-Mode.

MAXIMUM RATING (Ta=25℃)

EQUIVALENT CIRCUIT

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Drain-Source Voltage

Gate-Source Voltage

DC Drain Current

Drain Power Dissipation

Channel Temperature

Storage Temperature Range

Gate Leakage Current

Drain-Source Breakdown Voltage

Drain Cut-off Current

Gate Threshold Voltage

Forward Transfer Admittance

Drain-Source ON Resistance

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Time

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.

PLEASE HANDLE WITH CAUTION.

G

CHARACTERISTIC

CHARACTERISTIC

Turn-on Time

Turn-off Time

Revision No : 1

SEMICONDUCTOR

th

=0.5～1.5V.

D

S

TECHNICAL DATA

SYMBOL

V

V

T

T

P

I

GSS

DS

D

stg

ch

D

SYMBOL

V

R

(BR)DSS

I

I

|Y

DS(ON)

C

C

C

V

t

GSS

DSS

t

on

off

oss

iss

rss

th

fs

|

RATING

-55～150

±20

100

200

150

30

V

I

V

V

V

I

V

V

V

V

D

D

GS

DS

DS

DS

DS

DS

DS

DD

=100μ A, V

=10mA, V

=±16V, V

=30V, V

=3V, I

=3V, I

=3V, V

=3V, V

=3V, V

=5V, I

UNIT

mW

mA

℃

℃

V

V

TEST CONDITION

D

D

D

GS

GS

GS

=0.1mA

=10mA

=10mA, V

GS

GS

GS

=0V, f=1MHz

=0V, f=1MHz

=0V, f=1MHz

=0V

=2.5V

DS

=0V

=0V

GS

=0～5V

Type Name

Marking

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

L

1. SOURCE

2. GATE

3. DRAIN

1

2

P

KTK5132S

MIN.

0.5

30

25

E

B

SOT-23

-

-

-

-

-

-

-

-

M

KB

P

3

L

TYP.

180

8.5

3.3

9.3

50

4

-

-

-

-

-

DIM

A

B

C

G

H

D

E

K

M

N

J

L

P

MAX.

±1

1.5

1

7

-

-

-

-

-

-

-

MILLIMETERS

1.30+0.20/-0.15

0.45+0.15/-0.05

0.13+0.10/-0.05

1.00+0.20/-0.10

2.40+0.30/-0.20

Lot No.

0.00 ~ 0.10

0.20 MIN

1.30 MAX

2.93 0.20

0.55

7

1.90

0.95

+ _

UNIT

mS

μ A

μ A

pF

pF

pF

nS

nS

Ω

V

V

1/3

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