KTK5132E KEC(Korea Electronics), KTK5132E Datasheet
KTK5132E
Manufacturer Part Number
KTK5132E
Description
Manufacturer
KEC(Korea Electronics)
Specifications of KTK5132E
Date_code
10+
Packing_info
SOT-523
2002. 6. 17
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
°§2.5 Gate Drive.
°§Low Threshold Voltage : V
°§High Speed.
°§Small Package.
°§Enhancement-Mode.
MAXIMUM RATING (Ta=25°… )
EQUIVALENT CIRCUIT
ELECTRICAL CHARACTERISTICS (Ta=25°… )
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
G
CHARACTERISTIC
CHARACTERISTIC
Turn-on Time
Turn-off Time
Revision No : 0
SEMICONDUCTOR
th
=0.5°≠1.5V.
D
S
TECHNICAL DATA
SYMBOL
V
V
T
T
P
I
GSS
stg
DS
D
D
ch
SYMBOL
V
R
(BR)DSS
DS(ON)
I
I
|Y
C
C
C
V
t
GSS
DSS
t
off
on
rss
oss
iss
th
fs
|
RATING
-55°≠150
°æ20
100
100
150
30
V
I
V
V
V
I
V
V
V
V
D
D
GS
DS
DS
DS
DS
DS
DS
DD
=100•ÏA, V
=10mA, V
=°æ16V, V
=30V, V
=3V, I
=3V, I
=3V, V
=3V, V
=3V, V
=5V, I
UNIT
mW
mA
°…
°…
V
V
TEST CONDITION
D
D
D
GS
GS
GS
=0.1mA
=10mA
=10mA, V
GS
GS
GS
=0V, f=1MHz
=0V, f=1MHz
=0V, f=1MHz
=0V
=2.5V
DS
=0V
=0V
GS
=0°≠5V
Type Name
N CHANNEL MOS FIELD
2
1
1. SOURCE
2. GATE
3. DRAIN
Marking
EFFECT TRANSISTOR
KTK5132E
E
B
MIN.
0.5
30
25
-
-
-
-
-
-
-
-
3
ESM
TYP.
D
180
8.5
3.3
9.3
J
50
K B
4
-
-
-
-
-
DIM
A
D
G
H
B
C
E
J
MAX.
°æ1
1.5
MILLIMETERS
0.27+0.10/-0.05
1
7
-
-
-
-
-
-
-
1.60 0.10
0.85 0.10
0.70 0.10
1.60 0.10
1.00 0.10
0.13 0.05
0.50
+ _
+ _
+ _
+ _
+ _
+ _
UNIT
mS
•ÏA
•ÏA
pF
pF
pF
nS
nS
ߟ
V
V
1/3
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