KTC4375 KEC(Korea Electronics), KTC4375 Datasheet
KTC4375
Manufacturer Part Number
KTC4375
Description
Manufacturer
KEC(Korea Electronics)
Specifications of KTC4375
Date_code
05+
Packing_info
SOT-89
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KTC4375
Manufacturer:
JIANGSU
Quantity:
2 016
Company:
Part Number:
KTC4375-O-RTF
Manufacturer:
KEC
Quantity:
3 061
Part Number:
KTC4375-Y
Manufacturer:
KEC
Quantity:
20 000
Company:
Part Number:
KTC4375-Y-RTF
Manufacturer:
KEC
Quantity:
1 355
Company:
Part Number:
KTC4375-Y-RTF/H
Manufacturer:
KEC
Quantity:
2 148
Part Number:
KTC4375-Y-RTF/H
Manufacturer:
KEC
Quantity:
20 000
Company:
Part Number:
KTC4375-Y-RTF/P
Manufacturer:
STANLEY
Quantity:
20 150
Part Number:
KTC4375-Y-RTF/P
Manufacturer:
KEC
Quantity:
20 000
Part Number:
KTC4375-Y-RTK/P
Manufacturer:
KEC
Quantity:
20 000
2002. 5. 14
HIGH CURRENT APPLICATION.
FEATURES
・1W (Mounted on Ceramic Substrate).
・Small Flat Package.
・Complementary to KTA1663.
MAXIMUM RATING (Ta=25℃)
P
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : h
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
* : KTC4375 mounted on ceramic substrate (250mm
FE
CHARACTERISTIC
Classification O:100～200, Y:160～320
CHARACTERISTIC
Revision No : 3
SEMICONDUCTOR
SYMBOL
TECHNICAL DATA
V
V
V
P
T
P
I
I
T
CBO
CEO
EBO
C
C
B
stg
C
*
j
SYMBOL
h
V
V
FE
V
(BR)CEO
(BR)EBO
I
I
V
CE(sat)
C
CBO
EBO
(Note)
f
BE
T
ob
-55～150
RATING
2
x0.8t)
500
150
1.5
0.3
30
30
5
1
V
V
I
I
V
I
V
V
V
C
E
C
CB
EB
=1mA, I
CE
CE
CE
CB
=10mA, I
=1.5A, I
=5V, I
=2V, I
=2V, I
=2V, I
=30V, I
=10V, I
UNIT
mW
W
℃
℃
V
V
V
A
A
TEST CONDITION
C
B
C
C
C
C
=0
=0.03A
=0
B
=500mA
=500mA
=500mA
E
E
=0
=0
=0, f=1MHz
EPITAXIAL PLANAR NPN TRANSISTOR
D
Marking
Type Name
1
h
F
FE
H
A
2
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
F
K
Rank
3
MIN.
D
100
30
KTC4375
5
-
-
-
-
-
-
SOT-89
TYP.
120
C
-
-
-
-
-
-
-
-
DIM
G
A
B
C
D
E
G
H
K
F
J
MAX.
100
100
320
2.0
1.0
40
-
-
-
MILLIMETERS
0.45+0.15/-0.10
0.5+0.10/-0.05
Lot No.
2.50 0.20
1.50 0.10
4.70 MAX
1.70 MAX
4.25 MAX
1.75 MAX
0.40 TYP
0.75 MIN
+ _
+ _
UNIT
MHz
nA
nA
pF
V
V
V
V
1/2
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