HAT2206C-EL-E Renesas Electronics Corporation., HAT2206C-EL-E Datasheet

HAT2206C-EL-E

Manufacturer Part Number

HAT2206C-EL-E

Description

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.HAT2206C-EL-E.pdf (7 pages)

Specifications of HAT2206C-EL-E

Date_code

06+

Packing_info

SOT-363

Current page: 1 of 7
Download datasheet (84Kb)

HAT2206C

Silicon N Channel MOS FET

Power Switching

Features

Outline

Absolute Maximum Ratings

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body - Drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW

Rev.5.00 Jan 26, 2006 page 1 of 6

Low on-resistance

Low drive current.

High density mounting

1.8 V gate drive devices.

DS (on)

2. When using the glass epoxy board. (FR4 40

= 65 m typ. (at V

RENESAS Package code: PWSF0006JA-A

(Package name: CMFPAK-6)

10 s, duty cycle

Item

Indexband

= 4.5 V)

(pulse)

Pch

Symbol

Tstg

Tch

DSS

GSS

Note 2

Note1

1.6 mm)

–55 to +150

Ratings

830

150

1. Source

2. Drain

3. Drain

4. Drain

5. Drain

6. Gate

REJ03G1238-0500

Jan 26, 2006

Unit

(Ta = 25°C)

Rev.5.00

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