SI4425DY-T1-E3 Vishay Semiconductors, SI4425DY-T1-E3 Datasheet

SI4425DY-T1-E3

Manufacturer Part Number

SI4425DY-T1-E3

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.SI4425DY-T1-E3.pdf (5 pages)

Specifications of SI4425DY-T1-E3

Case

SOP8

Date_code

09+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4425DY-T1-E3

Manufacturer:

VISHAY

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4425DY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Download datasheet (88Kb)

Notes

Document Number: 71817

S-50402—Rev. F, 07-Mar-05

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

Surface Mounted on 1” x 1” FR4 Board.

−30

(V)

Ordering Information: Si4425DY

t A bi

0.023 @ V

0.014 @ V

= 150_C)

Parameter

DS(on)

= −4.5 V

= −10 V

Top View

Si4425DY-T1 (with Tape and Reel)

Si4425DY—E3 (Lead (Pb)-Free)

Si4425DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)

(W)

P-Channel 30-V (D-S) MOSFET

SO-8

= 25_C UNLESS OTHERWISE NOTED)

Steady State

t v 10 sec

−8.5

−11

= 25_C

= 70_C

= 25_C

= 70_C

(A)

Symbol

, T

thJA

thJF

stg

FEATURES

D TrenchFETr Power MOSFET

10 secs

Typical

−8.7

−2.7

−11

3.0

1.9

P-Channel MOSFET

−55 to 150

"20

−30

−50

Steady State

Maximum

Vishay Siliconix

−1.36

−6.5

0.95

1.5

−8

Si4425DY

www.vishay.com

Unit

Available

_C/W

Pb-free

C/W

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